View source for 18729577. DISPLAY APPARATUS (Semiconductor Energy Laboratory Co., Ltd.)

=DISPLAY APPARATUS=


==Organization Name==

[[:Category:Semiconductor Energy Laboratory Co., Ltd.|Semiconductor Energy Laboratory Co., Ltd.]]


[[Category:Semiconductor Energy Laboratory Co., Ltd.]]

==Inventor(s)==

[[:Category:Yasuharu Hosaka of Tochigi JP|Yasuharu Hosaka of Tochigi JP]][[Category:Yasuharu Hosaka of Tochigi JP]]

[[:Category:Yukinori Shima of Tatebayashi JP|Yukinori Shima of Tatebayashi JP]][[Category:Yukinori Shima of Tatebayashi JP]]

[[:Category:Masami Jintyou of Shimotsuga JP|Masami Jintyou of Shimotsuga JP]][[Category:Masami Jintyou of Shimotsuga JP]]

[[:Category:Masataka Nakada of Tochigi JP|Masataka Nakada of Tochigi JP]][[Category:Masataka Nakada of Tochigi JP]]

[[:Category:Junichi Koezuka of Tochigi JP|Junichi Koezuka of Tochigi JP]][[Category:Junichi Koezuka of Tochigi JP]]

[[:Category:Kenichi Okazaki of Atsugi JP|Kenichi Okazaki of Atsugi JP]][[Category:Kenichi Okazaki of Atsugi JP]]

==DISPLAY APPARATUS==


This abstract first appeared for US patent application 18729577 titled 'DISPLAY APPARATUS

==Original Abstract Submitted==

A display apparatus with high definition is provided. The display apparatus includes a transistor, a light-emitting device and a first insulating layer. The transistor includes a semiconductor layer, first to third conductive layers, and second and third insulating layers. The second insulating layer is provided over the first conductive layer and includes a first opening reaching the first conductive layer. The second conductive layer is provided over the second insulating layer and includes a second opening in a region overlapping with the first opening. The semiconductor layer is in contact with the top surface of the first conductive layer, the side surface of the second insulating layer, and the top surface and the side surface of the second conductive layer. The third insulating layer is provided over the semiconductor layer. The third conductive layer is provided over the third insulating layer. The first insulating layer is provided over the transistor. The first insulating layer and the third insulating layer include a third opening reaching the second conductive layer. The light-emitting device is provided over the first insulating layer and includes a pixel electrode, a common electrode, and an EL layer. The pixel electrode is electrically connected to the second conductive layer through the third opening. The EL layer includes a region in contact with the top surface and the side surface of the pixel electrode.



[[Category:H10K59/124]]
[[Category:H10K59/123]]
[[Category:CPC_H10K59/124]]