View source for 18683278. MEMORY DEVICE AND MEMORY SYSTEM simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)

=MEMORY DEVICE AND MEMORY SYSTEM=


==Organization Name==

[[:Category:SONY SEMICONDUCTOR SOLUTIONS CORPORATION|SONY SEMICONDUCTOR SOLUTIONS CORPORATION]]


[[Category:SONY SEMICONDUCTOR SOLUTIONS CORPORATION]]

==Inventor(s)==

[[:Category:LUI Sakai of KANAGAWA (JP)|LUI Sakai of KANAGAWA (JP)]][[Category:LUI Sakai of KANAGAWA (JP)]]

==MEMORY DEVICE AND MEMORY SYSTEM - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18683278 titled 'MEMORY DEVICE AND MEMORY SYSTEM

'''Simplified Explanation:'''
The patent application describes a memory device that reduces the time required for writing data by utilizing a magnetic memory element with a reference layer and a storage layer. An auxiliary magnetic field application unit and a write control unit work together to transition the memory element between different states for data storage.

* The memory device includes a magnetic memory element with a reference layer and a storage layer.
* Data is stored in two states: parallel and anti-parallel, based on the magnetization directions of the layers.
* An auxiliary magnetic field application unit supports the transition of the memory element between states.
* The write control unit initializes the memory element and performs state inversion for writing data.

'''Key Features and Innovation:'''
* Utilization of a magnetic memory element with reference and storage layers.
* Storage of data in parallel and anti-parallel states.
* Application of an auxiliary magnetic field for state transition.
* Initialization and state inversion for efficient data writing.

'''Potential Applications:'''
The technology can be applied in:
* Data storage devices
* Magnetic random-access memory (MRAM)
* High-speed data writing systems

'''Problems Solved:'''
* Reducing the time required for writing data
* Enhancing data storage efficiency
* Improving the performance of memory devices

'''Benefits:'''
* Faster data writing process
* Enhanced data storage capabilities
* Improved overall performance of memory devices

'''Commercial Applications:'''
Potential commercial uses include:
* High-speed data storage solutions
* Memory devices for electronic devices
* Data centers and server systems

'''Prior Art:'''
Researchers can explore prior art related to magnetic memory elements, data writing techniques, and memory device innovations.

'''Frequently Updated Research:'''
Stay updated on research related to magnetic memory technologies, data storage advancements, and memory device optimizations.

'''Questions about Magnetic Memory Element Technology:'''
1. How does the magnetic memory element technology improve data writing efficiency?
2. What are the potential future advancements in magnetic memory devices?

2. How does the magnetic memory element technology improve data writing efficiency?
The magnetic memory element technology improves data writing efficiency by utilizing a reference layer and a storage layer to store data in parallel and anti-parallel states. This allows for faster data writing processes and enhanced performance of memory devices.


==Original Abstract Submitted==

To reduce a time period required for writing data. A memory device includes a magnetic memory element, an auxiliary magnetic field application unit, and a write control unit, in which the magnetic memory element includes a reference layer having a fixed magnetization direction, and a storage layer stacked on the reference layer via an insulating layer and having a reversible magnetization direction, and that stores data in association with two states of a parallel state and an anti-parallel state, the parallel state having the same magnetization directions in the reference layer and the storage layer and the anti-parallel state having different magnetization directions in the reference layer and the storage layer, the auxiliary magnetic field application unit applies an auxiliary magnetic field supporting transition of the magnetic memory element from the parallel state to the anti-parallel state, and the write control unit performs initialization by applying an initialization voltage and an initialization magnetic field to the magnetic memory element to bring the magnetic memory element into the anti-parallel state, and writing by performing state inversion to apply a state inversion voltage and a state inversion magnetic field to the initialized magnetic memory element, according to the data, the state inversion voltage and state inversion magnetic field being used to bring the magnetic memory element in the anti-parallel state, into the parallel state.



[[Category:G11C11/16]]
[[Category:CPC_G11C11/1675]]