View source for 18676077. SCHOTTKY BARRIER DIODE simplified abstract (TDK Corporation)

=SCHOTTKY BARRIER DIODE=


==Organization Name==

[[:Category:TDK Corporation|TDK Corporation]]


[[Category:TDK Corporation]]

==Inventor(s)==

[[:Category:Jun Arima of Tokyo (JP)|Jun Arima of Tokyo (JP)]][[Category:Jun Arima of Tokyo (JP)]]

[[:Category:Minoru Fujita of Tokyo (JP)|Minoru Fujita of Tokyo (JP)]][[Category:Minoru Fujita of Tokyo (JP)]]

[[:Category:Katsumi Kawasaki of Tokyo (JP)|Katsumi Kawasaki of Tokyo (JP)]][[Category:Katsumi Kawasaki of Tokyo (JP)]]

[[:Category:Jun Hirabayashi of Tokyo (JP)|Jun Hirabayashi of Tokyo (JP)]][[Category:Jun Hirabayashi of Tokyo (JP)]]

==SCHOTTKY BARRIER DIODE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18676077 titled 'SCHOTTKY BARRIER DIODE

The patent application describes a Schottky barrier diode with a semiconductor substrate made of gallium oxide, a drift layer also made of gallium oxide, an anode electrode in Schottky contact with the drift layer, and a cathode electrode in ohmic contact with the semiconductor substrate. The drift layer features a center trench filled with the anode electrode, with an insulating film covering the bottom surface of the trench. A portion of the side surface of the trench is in Schottky contact with the anode electrode.

* Semiconductor substrate made of gallium oxide
* Drift layer made of gallium oxide
* Anode electrode in Schottky contact with drift layer
* Cathode electrode in ohmic contact with semiconductor substrate
* Center trench in drift layer filled with anode electrode
* Insulating film covering bottom surface of center trench
* Side surface of center trench in Schottky contact with anode electrode

Potential Applications:
- Power electronics
- Solar cells
- LED lighting
- High-frequency applications

Problems Solved:
- Improved efficiency in power conversion
- Enhanced performance in high-frequency applications
- Better heat dissipation

Benefits:
- Higher efficiency
- Improved reliability
- Enhanced performance in various applications

Commercial Applications:
Title: Gallium Oxide Schottky Barrier Diode: Commercial Uses and Market Implications
This technology can be utilized in power electronics, solar energy systems, LED lighting, and high-frequency communication devices. The market for these applications is growing rapidly, presenting significant opportunities for companies involved in the semiconductor industry.

Questions about Gallium Oxide Schottky Barrier Diode:

1. How does the use of gallium oxide in the semiconductor substrate benefit the performance of the diode?
   - Gallium oxide offers high breakdown voltage and thermal stability, making it ideal for high-power applications.

2. What advantages does the Schottky barrier design provide in terms of efficiency and performance?
   - The Schottky barrier reduces the forward voltage drop and improves switching speed, leading to higher efficiency and better overall performance.


==Original Abstract Submitted==

Disclosed herein is a Schottky barrier diode that includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a center trench filled with the anode electrode. A bottom surface of the center trench is covered with an insulating film without being in contact with the anode electrode. At least a part of a side surface of the center trench is brought into Schottky contact with the anode electrode.



[[Category:H01L29/872]]
[[Category:H01L29/24]]
[[Category:CPC_H01L29/8725]]