View source for 18674610. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Junhyoung Kim of Seoul (KR)|Junhyoung Kim of Seoul (KR)]][[Category:Junhyoung Kim of Seoul (KR)]]

[[:Category:Taemok Gwon of Seoul (KR)|Taemok Gwon of Seoul (KR)]][[Category:Taemok Gwon of Seoul (KR)]]

[[:Category:Seungmin Lee of Seoul (KR)|Seungmin Lee of Seoul (KR)]][[Category:Seungmin Lee of Seoul (KR)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18674610 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract includes multiple layers and structures to enhance its performance and functionality. 

* The device features first gate electrodes, a first channel structure with a first channel layer and a first channel filling insulating layer, and second gate electrodes positioned above the first gate electrodes.
* Additionally, there is a second channel structure with a second channel layer and a second channel filling insulating layer, along with a central wiring layer connecting the first and second channel layers.
* The first and second channel layers are interconnected within a region surrounded by the central wiring layer, as are the first and second channel filling insulating layers.
* This configuration allows for efficient communication and operation within the semiconductor device.

Potential Applications:
- This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications.
- It can be utilized in the development of high-performance integrated circuits for computing and communication systems.

Problems Solved:
- Enhances the performance and efficiency of semiconductor devices.
- Improves the integration and connectivity of different components within the device.

Benefits:
- Increased functionality and speed of semiconductor devices.
- Enhanced reliability and durability of integrated circuits.

Commercial Applications:
- This technology has significant commercial potential in the semiconductor industry for the production of cutting-edge electronic devices.
- It can be used in the development of next-generation processors, memory chips, and other semiconductor components.

Questions about the technology:
1. How does the central wiring layer improve the connectivity within the semiconductor device?
2. What are the specific advantages of having multiple channel structures in the device design?


==Original Abstract Submitted==

A semiconductor device includes first gate electrodes, a first channel structure penetrating the first gate electrodes and including a first channel layer and a first channel filling insulating layer, second gate electrodes above the first gate electrodes, a second channel structure penetrating the second gate electrodes and including a second channel layer and a second channel filling insulating layer, and a central wiring layer between the first gate electrodes and the second gate electrodes and connected to the first channel layer and the second channel layer, wherein the first channel layer and the second channel layer are connected to each other in a region surrounded by the central wiring layer, and the first channel filling insulating layer and the second channel filling insulating layer are connected to each other in a region surrounded by the central wiring layer.



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[[Category:H01L23/522]]
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[[Category:H01L25/065]]
[[Category:H01L25/18]]
[[Category:H10B41/27]]
[[Category:H10B43/27]]
[[Category:CPC_H01L24/08]]