View source for 18669285. MEMORY DEVICE (Taiwan Semiconductor Manufacturing Co., Ltd.)

=MEMORY DEVICE=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Shih-Lien Linus Lu of Hsinchu (TW)|Shih-Lien Linus Lu of Hsinchu (TW)]][[Category:Shih-Lien Linus Lu of Hsinchu (TW)]]

==MEMORY DEVICE==


This abstract first appeared for US patent application 18669285 titled 'MEMORY DEVICE




==Original Abstract Submitted==

A memory device is provided. The memory device includes a cell array having a plurality of cells, each of the plurality of cells operative to store a bit value. The memory device further includes a reset circuit connected to the cell array. The reset circuit is operative to reset, in parallel, the bit value stored in each of the plurality of cells to a predetermined bit value.



[[Category:G11C11/419]]
[[Category:G11C5/14]]
[[Category:G11C11/418]]
[[Category:CPC_G11C11/419]]