View source for 18668974. SEMICONDUCTOR PACKAGES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR PACKAGES=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Ju-Il Choi of Seongnam-si (KR)|Ju-Il Choi of Seongnam-si (KR)]][[Category:Ju-Il Choi of Seongnam-si (KR)]]

[[:Category:Jumyong Park of Cheonan-si (KR)|Jumyong Park of Cheonan-si (KR)]][[Category:Jumyong Park of Cheonan-si (KR)]]

[[:Category:Jin Ho An of Seoul (KR)|Jin Ho An of Seoul (KR)]][[Category:Jin Ho An of Seoul (KR)]]

[[:Category:Dongjoon Oh of Suwon-si (KR)|Dongjoon Oh of Suwon-si (KR)]][[Category:Dongjoon Oh of Suwon-si (KR)]]

[[:Category:Chungsun Lee of Asan-si (KR)|Chungsun Lee of Asan-si (KR)]][[Category:Chungsun Lee of Asan-si (KR)]]

[[:Category:Jeonggi Jin of Seoul (KR)|Jeonggi Jin of Seoul (KR)]][[Category:Jeonggi Jin of Seoul (KR)]]

[[:Category:Jinho Chun of Seoul (KR)|Jinho Chun of Seoul (KR)]][[Category:Jinho Chun of Seoul (KR)]]

==SEMICONDUCTOR PACKAGES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18668974 titled 'SEMICONDUCTOR PACKAGES

The semiconductor package described in the abstract includes a redistribution substrate with two different redistribution patterns at different levels, along with a semiconductor chip that is electrically connected to these patterns.

* The first redistribution pattern consists of a metal pattern on a dielectric layer, with a barrier pattern between the dielectric layer and the bottom surface of the metal pattern.
* The second redistribution pattern includes a metal pattern in a separate dielectric layer, with a barrier pattern between the dielectric layer and the bottom surface of the metal pattern and the sidewall of the metal pattern.

Potential Applications:
- This technology can be used in various semiconductor packaging applications where multiple redistribution patterns are required.
- It can be beneficial in high-density integrated circuits where efficient routing of signals is crucial.

Problems Solved:
- This innovation addresses the need for complex redistribution patterns in semiconductor packaging.
- It provides a solution for optimizing signal routing and connectivity in advanced semiconductor devices.

Benefits:
- Improved signal integrity and reliability in semiconductor packages.
- Enhanced performance and functionality of integrated circuits.
- Increased efficiency in routing signals within a compact space.

Commercial Applications:
Title: Advanced Semiconductor Packaging Technology for High-Density Integrated Circuits
This technology can be utilized in the production of advanced microprocessors, memory chips, and other high-performance semiconductor devices. It can cater to the growing demand for compact and efficient integrated circuits in various industries.

Questions about Semiconductor Packaging Technology:
1. How does the use of multiple redistribution patterns benefit the overall performance of semiconductor packages?
- The use of multiple redistribution patterns allows for more efficient routing of signals, leading to improved signal integrity and reliability in semiconductor packages.

2. What are the key challenges in implementing complex redistribution patterns in semiconductor packaging?
- One of the key challenges is ensuring proper alignment and connection between the semiconductor chip and the redistribution patterns, as well as managing signal interference in a compact space.


==Original Abstract Submitted==

A semiconductor package includes a redistribution substrate that includes a first redistribution pattern and a second redistribution pattern that are at different levels from each other, and a semiconductor chip on the redistribution substrate and including a plurality of chip pads electrically connected to the first and second redistribution patterns. The first redistribution pattern includes a first metal pattern on a first dielectric layer, and a first barrier pattern between the first dielectric layer and a bottom surface of the first metal pattern. The second redistribution pattern includes a second metal pattern in a second dielectric layer, and a second barrier pattern between the second dielectric layer and a bottom surface of the second metal pattern and between the second dielectric layer and a sidewall of the second metal pattern.



[[Category:H01L23/498]]
[[Category:CPC_H01L23/49838]]