View source for 18667802. PRE-DECODER CIRCUITRY simplified abstract (Micron Technology, Inc.)

=PRE-DECODER CIRCUITRY=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Jin Seung Son of McKinney TX (US)|Jin Seung Son of McKinney TX (US)]][[Category:Jin Seung Son of McKinney TX (US)]]

[[:Category:Mingdong Cui of Folsom CA (US)|Mingdong Cui of Folsom CA (US)]][[Category:Mingdong Cui of Folsom CA (US)]]

==PRE-DECODER CIRCUITRY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18667802 titled 'PRE-DECODER CIRCUITRY

The disclosure pertains to apparatuses, methods, and systems for pre-decoder circuitry in memory arrays.

* Memory array with multiple memory cells
* Decoder circuitry with n-type transistors and gates
* Pre-decoder circuitry providing bias conditions for selection signals
* Positive and negative voltages for different memory cell configurations
* First pre-decoder circuitry for positive voltage, second pre-decoder circuitry for negative voltage

Potential Applications:
- Memory storage devices
- Computer systems
- Data processing applications

Problems Solved:
- Efficient selection of memory cells
- Improved memory array performance

Benefits:
- Enhanced memory access speed
- Reduced power consumption
- Increased data processing efficiency

Commercial Applications:
Title: "Advanced Memory Array Pre-decoder Circuitry for Improved Performance"
This technology can be utilized in various commercial applications such as high-speed computing systems, data centers, and storage devices, enhancing their overall performance and efficiency in processing large amounts of data.

Prior Art:
Readers can explore prior research on memory array circuitry, decoder circuitry, and memory cell selection methods to understand the evolution of this technology.

Frequently Updated Research:
Researchers are continuously exploring advancements in memory array circuitry to further improve data processing speed and efficiency.

Questions about Memory Array Pre-decoder Circuitry:
1. How does pre-decoder circuitry impact memory access speed?
Pre-decoder circuitry optimizes the selection of memory cells, leading to faster access speeds and improved overall performance.

2. What are the potential drawbacks of using pre-decoder circuitry in memory arrays?
While pre-decoder circuitry enhances performance, it may add complexity to the memory array design and require additional power consumption for operation.


==Original Abstract Submitted==

The disclosure includes apparatuses, methods, and systems for pre-decoder circuitry. An embodiment includes a memory array including a plurality of memory cells, decoder circuitry coupled to the array and comprising a first and second n-type transistor having a first and second gate, respectively, and pre-decoder circuity to provide a bias condition for the first and second gate to provide a selection signal to one of the cells. The bias condition comprises a positive voltage for the first gate and a negative voltage for the second gate for a positive memory cell configuration, and zero volts for the first gate and the negative voltage for the second gate for a negative memory cell configuration. The pre-decoder circuitry comprises first pre-decoder circuitry to provide the positive voltage for the first gate and the zero volts for the second gate and second pre-decoder circuitry to provide the negative voltage for the second gate.



[[Category:G11C11/408]]
[[Category:G11C11/4074]]
[[Category:G11C11/4093]]
[[Category:G11C11/4096]]
[[Category:CPC_G11C11/4087]]