View source for 18657672. READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION simplified abstract (Micron Technology, Inc.)

=READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Patrick Robert Khayat of San Diego CA (US)|Patrick Robert Khayat of San Diego CA (US)]][[Category:Patrick Robert Khayat of San Diego CA (US)]]

[[:Category:James Fitzpatrick of Laguna Niguel CA (US)|James Fitzpatrick of Laguna Niguel CA (US)]][[Category:James Fitzpatrick of Laguna Niguel CA (US)]]

[[:Category:AbdelHakim S. Alhussien of San Jose CA (US)|AbdelHakim S. Alhussien of San Jose CA (US)]][[Category:AbdelHakim S. Alhussien of San Jose CA (US)]]

[[:Category:Sivagnanam Parthasarathy of Carlsbad CA (US)|Sivagnanam Parthasarathy of Carlsbad CA (US)]][[Category:Sivagnanam Parthasarathy of Carlsbad CA (US)]]

==READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18657672 titled 'READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION

'''Simplified Explanation:'''
The memory device described in the patent application can optimize read voltages for memory cells and identify cells for read disturb mitigation based on accumulated read disturb margins.

* Measures signal and noise characteristics of memory cells
* Determines optimized read voltage for a group of memory cells
* Identifies cells for read disturb mitigation based on accumulated read disturb margins and a predetermined threshold

'''Key Features and Innovation:'''
* Optimization of read voltages for memory cells
* Identification of memory cells for read disturb mitigation based on accumulated margins
* Utilization of signal and noise characteristics for optimization

'''Potential Applications:'''
* Memory devices in electronic devices
* Data storage systems
* Semiconductor industry

'''Problems Solved:'''
* Read disturb issues in memory cells
* Optimization of read voltages for improved performance
* Mitigation of read disturb based on accumulated margins

'''Benefits:'''
* Enhanced memory device performance
* Improved reliability of memory cells
* Efficient read disturb mitigation

'''Commercial Applications:'''
Memory device manufacturers can utilize this technology to enhance the performance and reliability of their products, potentially leading to increased market competitiveness and customer satisfaction.

'''Prior Art:'''
Readers interested in prior art related to this technology can explore research papers, patents, and industry publications in the field of memory devices and semiconductor technology.

'''Frequently Updated Research:'''
Researchers in the field of memory devices and semiconductor technology may be conducting studies on read disturb mitigation techniques and optimization algorithms for memory cells.

'''Questions about Memory Device Optimization:'''
1. What are the potential implications of using optimized read voltages in memory devices?
2. How does the identification of memory cells for read disturb mitigation contribute to overall device performance?


==Original Abstract Submitted==

A memory device to perform a read disturb mitigation operation. For example, the memory device can measure signal and noise characteristics of a group of memory cells to determine an optimized read voltage of the group of memory cells and determine a margin of read disturb accumulated in the group of memory cells. Subsequently, the memory device can identify the group of memory cells for the read disturb mitigation operation based on the margin of read disturb and a predetermined threshold.



[[Category:G11C16/34]]
[[Category:G06F18/214]]
[[Category:G06N20/00]]
[[Category:G11C7/02]]
[[Category:G11C16/10]]
[[Category:G11C16/26]]
[[Category:G11C16/30]]
[[Category:CPC_G11C16/3431]]