View source for 18649366. MICROELECTRONIC DEVICES WITH SOURCE REGION VERTICAL EXTENSION BETWEEN UPPER AND LOWER CHANNEL REGIONS, AND RELATED METHODS simplified abstract (Micron Technology, Inc.)

=MICROELECTRONIC DEVICES WITH SOURCE REGION VERTICAL EXTENSION BETWEEN UPPER AND LOWER CHANNEL REGIONS, AND RELATED METHODS=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Albert Fayrushin of Boise ID (US)|Albert Fayrushin of Boise ID (US)]][[Category:Albert Fayrushin of Boise ID (US)]]

[[:Category:Haitao Liu of Boise ID (US)|Haitao Liu of Boise ID (US)]][[Category:Haitao Liu of Boise ID (US)]]

[[:Category:Chris M. Carlson of Nampa ID (US)|Chris M. Carlson of Nampa ID (US)]][[Category:Chris M. Carlson of Nampa ID (US)]]

==MICROELECTRONIC DEVICES WITH SOURCE REGION VERTICAL EXTENSION BETWEEN UPPER AND LOWER CHANNEL REGIONS, AND RELATED METHODS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18649366 titled 'MICROELECTRONIC DEVICES WITH SOURCE REGION VERTICAL EXTENSION BETWEEN UPPER AND LOWER CHANNEL REGIONS, AND RELATED METHODS

==Simplified Explanation==
The patent application describes a microelectronic device with a unique stack structure and a pillar that extends through it, connecting to a source region below. The device is formed using a method that involves creating a vertical recess and filling it with doped material.

* The microelectronic device has a stack structure with alternating insulative and conductive layers.
* A pillar made of channel material extends through the stack structure.
* A source region below the stack structure contains doped material that extends upward to interface with the channel material.
* The device is formed by creating a vertical recess in the channel material and filling it with the doped material.

==Key Features and Innovation==
* Stack structure with alternating insulative and conductive layers.
* Pillar made of channel material extending through the stack structure.
* Source region with doped material extending upward to interface with the channel material.
* Method of forming the device involves creating a vertical recess and filling it with doped material.

==Potential Applications==
* Microelectronics
* Semiconductor devices
* Integrated circuits

==Problems Solved==
* Enhancing device performance
* Improving conductivity
* Facilitating vertical integration in microelectronic devices

==Benefits==
* Increased efficiency
* Enhanced functionality
* Improved reliability

==Commercial Applications==
The technology could be applied in various industries such as telecommunications, consumer electronics, and automotive for the development of advanced microelectronic devices.

==Prior Art==
Readers interested in exploring prior art related to this technology can start by researching patents and publications in the field of microelectronics, semiconductor devices, and integrated circuits.

==Frequently Updated Research==
Stay updated on the latest advancements in microelectronic devices, semiconductor materials, and fabrication techniques to understand the evolving landscape of this technology.

==Questions about Microelectronic Device==
===What are the potential challenges in scaling up this technology for mass production?===
Scaling up the production of microelectronic devices incorporating this technology may face challenges related to manufacturing consistency, material availability, and cost-effectiveness. Implementing quality control measures and optimizing production processes can help address these challenges.

===How does this technology compare to existing methods for integrating source regions in microelectronic devices?===
This technology offers a unique approach to integrating source regions in microelectronic devices by utilizing a stack structure and a pillar design. By creating an interface between the doped material and the channel material within the stack structure, it provides a novel solution for enhancing device performance and conductivity.


==Original Abstract Submitted==

A microelectronic device includes a stack structure comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. At least one pillar, comprising a channel material, extends through the stack structure. A source region, below the stack structure, comprises a doped material. A vertical extension of the doped material protrudes upward to an interface with the channel material at elevation within the stack structure (e.g., an elevation proximate or laterally overlapping in elevation at least one source-side GIDL region). The microelectronic device structure may be formed by a method that includes forming a lateral opening through cell materials of the pillar, recessing the channel material to form a vertical recess, and forming the doped material in the vertical recess. Additional microelectronic devices are also disclosed, as are related methods and electronic systems.



[[Category:H10B43/27]]
[[Category:H10B41/10]]
[[Category:H10B41/27]]
[[Category:H10B43/10]]
[[Category:CPC_H10B43/27]]