View source for 18635862. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (KABUSHIKI KAISHA TOSHIBA)

=SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF=


==Organization Name==

[[:Category:KABUSHIKI KAISHA TOSHIBA|KABUSHIKI KAISHA TOSHIBA]]


[[Category:KABUSHIKI KAISHA TOSHIBA]]

==Inventor(s)==

[[:Category:Shunsuke Shoji of Nomi Ishikawa JP|Shunsuke Shoji of Nomi Ishikawa JP]][[Category:Shunsuke Shoji of Nomi Ishikawa JP]]

==SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF==


This abstract first appeared for US patent application 18635862 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

==Original Abstract Submitted==

A semiconductor device according to an embodiment includes: a semiconductor part including a first main surface and a second main surface on an opposite side of the first main surface; a surface structure part provided on the first main surface, the surface structure part including a first electrode; a second electrode provided on the second main surface; a first protective resin film configured to cover an upper surface of the surface structure part; and a second protective resin film connected to the first protective resin film and configured to cover a side surface of the surface structure part.



[[Category:H01L23/31]]
[[Category:H01L21/782]]
[[Category:H01L23/29]]
[[Category:H01L29/739]]
[[Category:H01L29/78]]
[[Category:CPC_H01L23/3135]]