View source for 18620480. LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING LIGHT-EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT-EMITTING ELEMENT simplified abstract (Samsung Display Co., LTD.)

=LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING LIGHT-EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT-EMITTING ELEMENT=


==Organization Name==

[[:Category:Samsung Display Co., LTD.|Samsung Display Co., LTD.]]


[[Category:Samsung Display Co., LTD.]]

==Inventor(s)==

[[:Category:Hyung Rae Cha of Yongin-si (KR)|Hyung Rae Cha of Yongin-si (KR)]][[Category:Hyung Rae Cha of Yongin-si (KR)]]

[[:Category:Dong Uk Kim of Yongin-si (KR)|Dong Uk Kim of Yongin-si (KR)]][[Category:Dong Uk Kim of Yongin-si (KR)]]

[[:Category:Sung Ae Jang of Yongin-si (KR)|Sung Ae Jang of Yongin-si (KR)]][[Category:Sung Ae Jang of Yongin-si (KR)]]

[[:Category:Ji Hyun Ham of Yongin-si (KR)|Ji Hyun Ham of Yongin-si (KR)]][[Category:Ji Hyun Ham of Yongin-si (KR)]]

==LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING LIGHT-EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT-EMITTING ELEMENT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18620480 titled 'LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING LIGHT-EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT-EMITTING ELEMENT

The abstract describes a light-emitting element with a first end portion and a second end portion in a length direction, along with electrodes and semiconductor layers.

* The light-emitting element has a first electrode, a first semiconductor layer, an active layer, a second semiconductor layer, and a second electrode.
* The second electrode consists of a first layer and a second layer on top of the first semiconductor layer.
* The first semiconductor layer is p-type doped, while the second semiconductor layer is n-type doped.
* The first electrode is in ohmic contact with the first semiconductor layer, and the second electrode is in ohmic contact with the second semiconductor layer.

Potential Applications:
- LED lighting
- Display technology
- Optoelectronic devices

Problems Solved:
- Efficient light emission
- Improved electrical conductivity
- Enhanced performance of light-emitting devices

Benefits:
- Higher brightness levels
- Longer lifespan
- Energy efficiency

Commercial Applications:
Title: Advanced LED Technology for Enhanced Lighting Solutions
This technology can be utilized in various industries such as consumer electronics, automotive, and healthcare for improved lighting solutions.

Questions about the technology:
1. How does the doping of the semiconductor layers affect the performance of the light-emitting element?
2. What are the key differences between the first electrode and the second electrode in terms of their functions and structures?


==Original Abstract Submitted==

A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.



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