View source for 18614290. STACKED FORKSHEET TRANSISTORS simplified abstract (Intel Corporation)

=STACKED FORKSHEET TRANSISTORS=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Cheng-Ying Huang of Portland OR (US)|Cheng-Ying Huang of Portland OR (US)]][[Category:Cheng-Ying Huang of Portland OR (US)]]

[[:Category:Gilbert Dewey of Beaverton OR (US)|Gilbert Dewey of Beaverton OR (US)]][[Category:Gilbert Dewey of Beaverton OR (US)]]

[[:Category:Anh Phan of Beaverton OR (US)|Anh Phan of Beaverton OR (US)]][[Category:Anh Phan of Beaverton OR (US)]]

[[:Category:Nicole K. Thomas of Portland OR (US)|Nicole K. Thomas of Portland OR (US)]][[Category:Nicole K. Thomas of Portland OR (US)]]

[[:Category:Urusa Alaan of Hillsboro OR (US)|Urusa Alaan of Hillsboro OR (US)]][[Category:Urusa Alaan of Hillsboro OR (US)]]

[[:Category:Seung Hoon Sung of Portland OR (US)|Seung Hoon Sung of Portland OR (US)]][[Category:Seung Hoon Sung of Portland OR (US)]]

[[:Category:Christopher M. Neumann of Portland OR (US)|Christopher M. Neumann of Portland OR (US)]][[Category:Christopher M. Neumann of Portland OR (US)]]

[[:Category:Willy Rachmady of Beaverton OR (US)|Willy Rachmady of Beaverton OR (US)]][[Category:Willy Rachmady of Beaverton OR (US)]]

[[:Category:Patrick Morrow of Portland OR (US)|Patrick Morrow of Portland OR (US)]][[Category:Patrick Morrow of Portland OR (US)]]

[[:Category:Hui Jae Yoo of Portland OR (US)|Hui Jae Yoo of Portland OR (US)]][[Category:Hui Jae Yoo of Portland OR (US)]]

[[:Category:Richard E. Schenker of Portland OR (US)|Richard E. Schenker of Portland OR (US)]][[Category:Richard E. Schenker of Portland OR (US)]]

[[:Category:Marko Radosavljevic of Portland OR (US)|Marko Radosavljevic of Portland OR (US)]][[Category:Marko Radosavljevic of Portland OR (US)]]

[[:Category:Jack T. Kavalieros of Portland OR (US)|Jack T. Kavalieros of Portland OR (US)]][[Category:Jack T. Kavalieros of Portland OR (US)]]

[[:Category:Ehren Mannebach of Beaverton OR (US)|Ehren Mannebach of Beaverton OR (US)]][[Category:Ehren Mannebach of Beaverton OR (US)]]

==STACKED FORKSHEET TRANSISTORS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18614290 titled 'STACKED FORKSHEET TRANSISTORS

==Simplified Explanation==
The patent application describes stacked forksheet transistor devices and methods of fabricating them. These devices consist of vertical stacks of semiconductor channels adjacent to a backbone, with one device stacked on top of another.

* Stacked forksheet transistor devices
* Fabrication methods for these devices
* Vertical stacks of semiconductor channels
* Integration into an integrated circuit structure
* Stacking of multiple transistor devices

==Key Features and Innovation==
* Stacked forksheet transistor devices with vertical semiconductor channels
* Integration of multiple transistor devices into an integrated circuit structure
* Efficient use of space with stacked configuration
* Improved performance and functionality of the devices
* Novel fabrication methods for creating these devices

==Potential Applications==
The technology can be applied in:
* Semiconductor industry
* Integrated circuit design
* Electronics manufacturing
* Advanced computing systems
* Mobile devices and smartphones

==Problems Solved==
* Space optimization in integrated circuits
* Enhanced performance of transistor devices
* Efficient use of semiconductor channels
* Improved functionality in electronic devices
* Advanced fabrication techniques for complex structures

==Benefits==
* Increased efficiency in integrated circuit design
* Enhanced performance of electronic devices
* Compact and space-saving transistor configurations
* Improved functionality and speed in computing systems
* Potential for advanced technological applications

==Commercial Applications==
Title: Stacked Forksheet Transistor Devices in Integrated Circuits
This technology can be commercially used in:
* Semiconductor manufacturing companies
* Electronics industry for advanced devices
* Research and development in computing technology
* Consumer electronics market for improved products
* Potential for licensing and collaboration with tech companies

==Questions about Stacked Forksheet Transistor Devices==
===What are the key advantages of using stacked forksheet transistor devices in integrated circuits?===
Stacked forksheet transistor devices offer improved performance, space optimization, and enhanced functionality in electronic devices.

===How do the fabrication methods for these devices differ from traditional transistor manufacturing processes?===
The fabrication methods for stacked forksheet transistor devices involve creating vertical stacks of semiconductor channels, which is a novel approach compared to traditional transistor fabrication techniques.


==Original Abstract Submitted==

Embodiments disclosed herein include stacked forksheet transistor devices, and methods of fabricating stacked forksheet transistor devices. In an example, an integrated circuit structure includes a backbone. A first transistor device includes a first vertical stack of semiconductor channels adjacent to an edge of the backbone. A second transistor device includes a second vertical stack of semiconductor channels adjacent to the edge of the backbone. The second transistor device is stacked on the first transistor device.



[[Category:H01L27/092]]
[[Category:H01L29/06]]
[[Category:H01L29/423]]
[[Category:H01L29/775]]
[[Category:H01L29/78]]
[[Category:H10B12/00]]
[[Category:CPC_H01L27/0924]]