View source for 18611093. METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)

=METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM=


==Organization Name==

[[:Category:Kokusai Electric Corporation|Kokusai Electric Corporation]]


[[Category:Kokusai Electric Corporation]]

==Inventor(s)==

[[:Category:Katsuyoshi Harada of Toyama-shi (JP)|Katsuyoshi Harada of Toyama-shi (JP)]][[Category:Katsuyoshi Harada of Toyama-shi (JP)]]

[[:Category:Ryota Ueno of Toyama-shi (JP)|Ryota Ueno of Toyama-shi (JP)]][[Category:Ryota Ueno of Toyama-shi (JP)]]

[[:Category:Yoshitomo Hashimoto of Toyama-shi (JP)|Yoshitomo Hashimoto of Toyama-shi (JP)]][[Category:Yoshitomo Hashimoto of Toyama-shi (JP)]]

[[:Category:Kimihiko Nakatani of Toyama-shi (JP)|Kimihiko Nakatani of Toyama-shi (JP)]][[Category:Kimihiko Nakatani of Toyama-shi (JP)]]

==METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18611093 titled 'METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

The technology described in the patent application involves a method of creating a film on a substrate, modifying a portion of the film, and then removing the modified portion.

* Forming a first film in a concave portion by supplying a first film-forming agent to the substrate.
* Forming a second film with a different chemical composition on top of the first film in the concave portion.
* Modifying a part of the second film by supplying a modifying agent containing fluorine to the substrate.
* Removing the modified portion of the second film by supplying an etching agent containing halogen to the substrate.

Potential Applications:
- Microelectronics industry for creating intricate patterns on substrates.
- Optics industry for producing specialized coatings on lenses.
- Biomedical field for developing controlled drug delivery systems.

Problems Solved:
- Allows for precise control over film formation in complex shapes.
- Enables selective modification of film properties.
- Facilitates the creation of multi-layered structures on substrates.

Benefits:
- Enhanced customization of film properties.
- Improved efficiency in film fabrication processes.
- Greater flexibility in designing advanced materials.

Commercial Applications:
Title: Advanced Film Formation Technology for Precision Applications
This technology can be utilized in industries such as microelectronics, optics, and biomedicine for creating tailored films with specific properties, opening up new possibilities for product development and innovation in these sectors.

Questions about the technology:
1. How does the use of fluorine-containing modifying agents impact the properties of the film?
2. What are the potential challenges in scaling up this technology for industrial production?


==Original Abstract Submitted==

A technology of performing (a) forming a first film in a concave portion by supplying a first film-forming agent to a substrate on a surface of which the concave portion is provided; (b) forming a second film having a chemical composition different from a chemical composition of the first film on the first film formed in the concave portion by supplying a second film-forming agent to the substrate; (c) modifying a part of the second film by supplying a modifying agent containing fluorine to the substrate; and (d) removing a modified portion of the second film by supplying an etching agent containing halogen to the substrate.



[[Category:H01L21/02]]
[[Category:C23C16/34]]
[[Category:C23C16/40]]
[[Category:C23C16/52]]
[[Category:H01L21/311]]
[[Category:CPC_H01L21/02164]]