View source for 18607213. ORIGINAL, METHOD OF DETERMINING PATTERN OF ORIGINAL, AND METHOD OF EXPOSING simplified abstract (CANON KABUSHIKI KAISHA)

=ORIGINAL, METHOD OF DETERMINING PATTERN OF ORIGINAL, AND METHOD OF EXPOSING=


==Organization Name==

[[:Category:CANON KABUSHIKI KAISHA|CANON KABUSHIKI KAISHA]]


[[Category:CANON KABUSHIKI KAISHA]]

==Inventor(s)==

[[:Category:TORU Kobayashi of Tochigi (JP)|TORU Kobayashi of Tochigi (JP)]][[Category:TORU Kobayashi of Tochigi (JP)]]

==ORIGINAL, METHOD OF DETERMINING PATTERN OF ORIGINAL, AND METHOD OF EXPOSING - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18607213 titled 'ORIGINAL, METHOD OF DETERMINING PATTERN OF ORIGINAL, AND METHOD OF EXPOSING

'''Simplified Explanation:'''
The patent application describes a pattern formed on a multilayer film for exposing a photosensitive material, with an auxiliary pattern to reduce irregularities on the sidewall of the material.

'''Key Features and Innovation:'''
* Pattern formed on a multilayer film for exposing photosensitive material
* Auxiliary pattern included to reduce irregularities on the sidewall of the material
* Main pattern and auxiliary pattern separated by a predetermined interval

'''Potential Applications:'''
This technology could be used in the manufacturing of microelectronics, photolithography, and semiconductor industries.

'''Problems Solved:'''
This technology addresses the issue of irregularities on the sidewall of photosensitive material during exposure processes.

'''Benefits:'''
* Improved precision in patterning photosensitive material
* Enhanced quality of exposed patterns
* Reduction of defects in the manufacturing process

'''Commercial Applications:'''
The technology could be valuable in the production of high-resolution displays, integrated circuits, and other electronic components.

'''Questions about the Technology:'''
1. How does the auxiliary pattern help reduce irregularities on the sidewall of the photosensitive material?
2. What are the specific advantages of using a multilayer film for exposing photosensitive material?

'''Frequently Updated Research:'''
Researchers are continually exploring new materials and techniques to further improve the precision and efficiency of patterning processes in microelectronics and semiconductor industries.


==Original Abstract Submitted==

An original includes a pattern formed for use in exposure of a photosensitive material disposed on an upper side of a multilayer film provided on a substrate, wherein the pattern includes a main pattern and an auxiliary pattern disposed at a position separated by a predetermined interval from the main pattern, and wherein the auxiliary pattern suppresses irregularities on an inclined surface of a sidewall portion of the photosensitive material on which the main pattern is formed.



[[Category:G03F1/38]]
[[Category:CPC_G03F1/38]]