View source for 18601100. MEMORY READOUT CIRCUIT AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=MEMORY READOUT CIRCUIT AND METHOD=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Chih-Min Liu of Hsinchu (TW)|Chih-Min Liu of Hsinchu (TW)]][[Category:Chih-Min Liu of Hsinchu (TW)]]

==MEMORY READOUT CIRCUIT AND METHOD - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18601100 titled 'MEMORY READOUT CIRCUIT AND METHOD

The abstract describes a circuit comprising anti-fuse cells, MRAM cells, an amplifier, an ADC, and a comparator, all working together to output data bits based on current and voltage levels received from the selection circuits.

* The circuit includes anti-fuse cells and MRAM cells for data storage.
* An amplifier amplifies signals from the selection circuits.
* An ADC converts analog signals to digital for processing.
* A comparator compares signals to output data bits.
* The circuit is designed to efficiently process and output data based on input signals.

Potential Applications:
- Data storage systems
- Signal processing applications
- Integrated circuit design

Problems Solved:
- Efficient data processing and storage
- Signal amplification and conversion
- Reliable data output

Benefits:
- Fast and accurate data processing
- Compact design for integrated circuits
- Versatile applications in various industries

Commercial Applications:
Title: Advanced Data Processing Circuit for Integrated Systems
This technology can be used in:
- Consumer electronics
- Telecommunications
- Automotive systems

Prior Art:
Researchers can explore prior patents related to anti-fuse cells, MRAM cells, and signal processing circuits to understand the evolution of this technology.

Frequently Updated Research:
Researchers can stay updated on advancements in data storage and processing technologies to enhance the efficiency and performance of similar circuits.

Questions about the technology:
1. How does the circuit optimize data processing efficiency?
- The circuit utilizes anti-fuse cells and MRAM cells for fast and reliable data storage, while the amplifier, ADC, and comparator work together to process and output data efficiently.

2. What are the key advantages of using MRAM cells in this circuit?
- MRAM cells offer non-volatile data storage, high speed, and low power consumption, making them ideal for applications requiring fast and reliable data processing.


==Original Abstract Submitted==

A circuit includes a plurality of anti-fuse cells coupled to a first selection circuit, a plurality of magnetic random-access memory (MRAM) cells coupled to a second selection circuit, an amplifier including a first input terminal coupled to each of the first and second selection circuits, an analog-to-digital converter (ADC) including input terminals coupled to output terminals of the amplifier, and a comparator including a first input port coupled to an output port of the ADC. The amplifier, ADC, and comparator are configured to output data bits from the comparator responsive to current levels received from the first selection circuit at the first input terminal of the amplifier and first voltage levels received from the second selection circuit at the first input terminal of the amplifier.



[[Category:G11C17/18]]
[[Category:G11C11/16]]
[[Category:G11C17/16]]
[[Category:CPC_G11C17/18]]