View source for 18599910. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Sangkoo Kang of Suwon-si (KR)|Sangkoo Kang of Suwon-si (KR)]][[Category:Sangkoo Kang of Suwon-si (KR)]]

[[:Category:Wookyung You of Suwon-si (KR)|Wookyung You of Suwon-si (KR)]][[Category:Wookyung You of Suwon-si (KR)]]

[[:Category:Koungmin Ryu of Suwon-si (KR)|Koungmin Ryu of Suwon-si (KR)]][[Category:Koungmin Ryu of Suwon-si (KR)]]

[[:Category:Hoonseok Seo of Suwon-si (KR)|Hoonseok Seo of Suwon-si (KR)]][[Category:Hoonseok Seo of Suwon-si (KR)]]

[[:Category:Woojin Lee of Suwon-si (KR)|Woojin Lee of Suwon-si (KR)]][[Category:Woojin Lee of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18599910 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract includes fin-type active patterns, a gate structure, separation structures, source/drain regions, an interlayer insulating layer, a contact structure, a buried conductive structure, and a power transmission structure.

* The semiconductor device features fin-type active patterns on a substrate, gate structure, and separation structures.
* Source/drain regions are positioned on the fin-type active patterns adjacent to the gate structure.
* An interlayer insulating layer covers the source/drain regions.
* A contact structure connects to the source/drain regions.
* A buried conductive structure, with a defined width, is electrically connected to the contact structure.
* A power transmission structure extends from the substrate towards the surface and links to the buried conductive structure.

Potential Applications:
- This technology can be applied in the semiconductor industry for advanced integrated circuits.
- It may find use in high-performance computing systems and mobile devices.

Problems Solved:
- Enhances the efficiency and performance of semiconductor devices.
- Improves the connectivity and power transmission within the device.

Benefits:
- Increased speed and reliability in electronic devices.
- Enhanced power distribution capabilities.
- Potential for smaller and more efficient semiconductor designs.

Commercial Applications:
Title: Advanced Semiconductor Device for Enhanced Performance
This technology can revolutionize the semiconductor industry by enabling faster and more reliable electronic devices. It has significant implications for the development of high-performance computing systems and mobile devices, enhancing their speed and power efficiency.

Questions about the technology:
1. How does this semiconductor device improve power transmission efficiency?
- The buried conductive structure and power transmission structure enhance power distribution within the device, leading to improved efficiency.
2. What are the potential commercial applications of this advanced semiconductor technology?
- This technology can be utilized in various electronic devices, from smartphones to high-performance computing systems, to enhance their speed and reliability.


==Original Abstract Submitted==

Provided is a semiconductor device, the semiconductor device, including: a plurality of fin-type active patterns extending in a first direction on a substrate; a gate structure extending in a second direction, and crossing the plurality of fin-type active patterns; a plurality of separation structures extending in the second direction; source/drain regions disposed on the plurality of fin-type active patterns on both sides of the gate structure; an interlayer insulating layer covering the source/drain regions on the substrate; a contact structure connected to at least one of the source/drain regions; a buried conductive structure electrically connected to the contact structure in the interlayer insulating layer, and having a first width defined by a distance between adjacent separation structures among the plurality of separation structures; and a power transmission structure extending from the second surface toward the first surface of the substrate, and connected to the buried conductive structure.



[[Category:H01L23/522]]
[[Category:H01L23/48]]
[[Category:H01L23/528]]
[[Category:H01L29/417]]
[[Category:H01L29/775]]
[[Category:H01L29/786]]
[[Category:CPC_H01L23/5226]]