View source for 18599597. ON-CHIP CAPACITORS IN SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME simplified abstract (Yangtze Memory Technologies Co., Ltd.)

=ON-CHIP CAPACITORS IN SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME=


==Organization Name==

[[:Category:Yangtze Memory Technologies Co., Ltd.|Yangtze Memory Technologies Co., Ltd.]]


[[Category:Yangtze Memory Technologies Co., Ltd.]]

==Inventor(s)==

[[:Category:Lei Xue of Wuhan (CN)|Lei Xue of Wuhan (CN)]][[Category:Lei Xue of Wuhan (CN)]]

[[:Category:Wei Liu of Wuhan (CN)|Wei Liu of Wuhan (CN)]][[Category:Wei Liu of Wuhan (CN)]]

[[:Category:Liang Chen of Wuhan (CN)|Liang Chen of Wuhan (CN)]][[Category:Liang Chen of Wuhan (CN)]]

==ON-CHIP CAPACITORS IN SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18599597 titled 'ON-CHIP CAPACITORS IN SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME

The abstract describes a method for forming a three-dimensional memory device, involving the creation of a stack with different regions and the formation of capacitors with specific orientations.

* A stack is formed with a first region and a second region along different directions.
* The stack includes first and second stacks in each region.
* An interlayer dielectric (ILD) layer is formed over the second stack.
* Capacitors with first contacts are created through the ILD layer on one side of the second stack in a perpendicular direction.

Potential Applications:
- This technology can be applied in the development of advanced memory devices for various electronic devices.
- It can enhance the storage capacity and performance of memory systems in computers, smartphones, and other gadgets.

Problems Solved:
- Addresses the need for higher memory density and improved performance in modern electronic devices.
- Solves challenges related to the design and fabrication of three-dimensional memory structures.

Benefits:
- Increased memory capacity and speed.
- Enhanced efficiency and reliability of memory devices.
- Potential cost savings in memory production processes.

Commercial Applications:
- This innovation has significant commercial potential in the semiconductor industry.
- It can be utilized by memory manufacturers to produce next-generation memory devices with improved capabilities.

Questions about the technology:
1. How does the formation of capacitors with specific orientations contribute to the performance of the memory device?
2. What are the key advantages of using a stack with different regions in the fabrication process?


==Original Abstract Submitted==

A method for forming a three-dimensional (D) memory device is disclosed. A stack is formed. The stack includes a first region and a second region disposed on a side of the first region along a first direction. The stack includes a first stack in the first region and a second stack in the second region. An interlayer dielectric (ILD) layer is formed over the second stack. Capacitors including first contacts each extending through the ILD layer and disposed on a first side of the second stack along a second direction are formed. The second direction is perpendicular to the first direction.



[[Category:H01L23/522]]
[[Category:H01L21/768]]
[[Category:H10B43/27]]
[[Category:H10B43/35]]
[[Category:CPC_H01L23/5223]]