View source for 18598793. SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Meng-Sheng Chang of Chubei City (TW)|Meng-Sheng Chang of Chubei City (TW)]][[Category:Meng-Sheng Chang of Chubei City (TW)]]

[[:Category:Chia-En Huang of Xinfeng Township (TW)|Chia-En Huang of Xinfeng Township (TW)]][[Category:Chia-En Huang of Xinfeng Township (TW)]]

[[:Category:Yih Wang of Hsinchu City (TW)|Yih Wang of Hsinchu City (TW)]][[Category:Yih Wang of Hsinchu City (TW)]]

==SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18598793 titled 'SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES

The memory system described in the patent application consists of a memory array with multiple memory cells, each containing two programming transistors and two reading transistors. An authentication circuit is connected to the memory array to generate a Physically Unclonable Function (PUF) signature based on the logic states of the memory cells, which are determined by the breakdown of the programming transistors.

* The memory system includes a unique authentication circuit that generates a PUF signature based on the logic states of the memory cells.
* Each memory cell has two programming transistors and two reading transistors, allowing for secure data storage and retrieval.
* The logic state of each memory cell is determined by the breakdown of the corresponding programming transistors.
* This technology provides a secure and reliable method for generating unique signatures for authentication purposes.
* By utilizing the breakdown of programming transistors, the memory system ensures the integrity of the stored data.

Potential Applications:
- Secure data storage in sensitive applications such as military, healthcare, and finance.
- Authentication and identification systems for access control and anti-counterfeiting measures.

Problems Solved:
- Ensures data security and integrity by generating unique PUF signatures.
- Provides a reliable method for authentication and identification purposes.

Benefits:
- Enhanced data security and protection against unauthorized access.
- Reliable authentication system for secure applications.
- Efficient and effective method for generating unique signatures.

Commercial Applications:
Secure data storage solutions for industries requiring high levels of data security, such as defense, healthcare, and finance sectors. This technology can also be used in authentication systems for access control and anti-counterfeiting measures.

Questions about the technology:
1. How does the breakdown of programming transistors contribute to generating unique PUF signatures?
2. What are the potential implications of using this memory system in secure data storage applications?


==Original Abstract Submitted==

A memory system includes a memory array comprising a plurality of memory cells. Each of the memory cells includes a first programming transistor, a second programming transistor, a first reading transistor coupled to the first programming transistor in series, and a second reading transistor coupled to the second programming transistor in series. The memory system includes an authentication circuit operatively coupled to the memory array. The authentication circuit is configured to generate a Physically Unclonable Function (PUF) signature based on respective logic states of the plurality of memory cells. The logic state of each of the plurality of memory cells is determined based on a preceding breakdown of either the corresponding first programming transistor or second programming transistor.



[[Category:G11C16/10]]
[[Category:G11C16/26]]
[[Category:H01L29/06]]
[[Category:H01L29/423]]
[[Category:H01L29/78]]
[[Category:CPC_G11C16/10]]