View source for 18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Mauricio Manfrini of Zhubei City (TW)|Mauricio Manfrini of Zhubei City (TW)]][[Category:Mauricio Manfrini of Zhubei City (TW)]]

[[:Category:Chih-Yu Chang of New Taipei City (TW)|Chih-Yu Chang of New Taipei City (TW)]][[Category:Chih-Yu Chang of New Taipei City (TW)]]

[[:Category:Sai-Hooi Yeong of Zhubei City (TW)|Sai-Hooi Yeong of Zhubei City (TW)]][[Category:Sai-Hooi Yeong of Zhubei City (TW)]]

==TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18597981 titled 'TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE

The present disclosure pertains to a Ferroelectric Field-Effect Transistor (FeFET) device. In some embodiments, the FeFET device consists of a ferroelectric layer with a gate electrode on one side and an OS channel layer, source/drain regions, and a 2D contacting layer on the other side.

* Ferroelectric layer with gate electrode
* OS channel layer with source/drain regions
* 2D contacting layer with different doping type
* Integration of ferroelectric and semiconductor materials
* Enhanced performance and functionality

Potential Applications:
- Memory storage devices
- Logic circuits
- Sensor technology
- Non-volatile memory applications

Problems Solved:
- Improved data retention
- Enhanced device performance
- Increased efficiency in memory storage

Benefits:
- Faster operation speed
- Lower power consumption
- Higher data density
- Extended device lifespan

Commercial Applications:
Title: Advanced FeFET Technology for Next-Generation Memory Devices
This technology can revolutionize the memory storage industry by offering faster, more efficient, and higher capacity memory solutions. It can be utilized in various electronic devices, data storage systems, and IoT applications.

Questions about FeFET Technology:
1. How does FeFET technology compare to traditional memory storage solutions?
FeFET technology offers improved performance, lower power consumption, and higher data density compared to traditional memory storage solutions.

2. What are the potential challenges in implementing FeFET technology in commercial products?
The main challenges in implementing FeFET technology in commercial products include scalability, manufacturing costs, and integration with existing technologies.


==Original Abstract Submitted==

The present disclosure relates a ferroelectric field-effect transistor (FeFET) device. In some embodiments, the FeFET device includes a ferroelectric layer having a first side and a second side opposite to the first side and a gate electrode disposed along the first side of the ferroelectric layer. The FeFET device further includes an OS channel layer disposed along the second side of the ferroelectric layer opposite to the first side and a pair of source/drain regions disposed on opposite sides of the OS channel layer. The FeFET device further includes a 2D contacting layer disposed along the OS channel layer. The OS channel layer has a first doping type, and the 2D contacting layer has a second doping type different than the first doping type.



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