View source for 18597816. MEMORY DEVICE, MEMORY INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=MEMORY DEVICE, MEMORY INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Fu-Ting Sung of Taoyuan City (TW)|Fu-Ting Sung of Taoyuan City (TW)]][[Category:Fu-Ting Sung of Taoyuan City (TW)]]

==MEMORY DEVICE, MEMORY INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18597816 titled 'MEMORY DEVICE, MEMORY INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF

'''Simplified Explanation''': 

This patent application describes a memory device with a unique composite bottom electrode structure, a top electrode, and a resistance variable layer in between. 

* The memory device includes a composite bottom electrode, a top electrode, and a resistance variable layer.
* The composite bottom electrode consists of a first bottom electrode and a second bottom electrode stacked on top of each other.
* The second bottom electrode is laterally recessed from the first bottom electrode, creating a unique structure.
* The resistance variable layer is sandwiched between the composite bottom electrode and the top electrode.

'''Key Features and Innovation''': 

* Composite bottom electrode structure
* Lateral recess of the second bottom electrode
* Resistance variable layer for memory function

'''Potential Applications''': 

This technology can be used in various memory devices, such as non-volatile memory, resistive random-access memory (ReRAM), and more.

'''Problems Solved''': 

This technology addresses the need for improved memory device structures that offer better performance and reliability.

'''Benefits''': 

* Enhanced memory device performance
* Improved reliability
* Potential for higher memory density

'''Commercial Applications''': 

This technology could have significant implications in the semiconductor industry, particularly in the development of advanced memory devices for consumer electronics, data storage, and computing applications.

'''Prior Art''': 

Readers interested in prior art related to this technology can explore research papers, patents, and industry publications on memory device structures and materials.

'''Frequently Updated Research''': 

Researchers are constantly exploring new materials and structures for memory devices to improve performance and reliability.

'''Questions about Memory Device Technology''': 

1. What are the key advantages of using a composite bottom electrode structure in memory devices?
2. How does the lateral recess of the second bottom electrode contribute to the functionality of the memory device?


==Original Abstract Submitted==

A memory device, a memory integrated circuit and a manufacturing method of the memory device are provided. The memory device includes a composite bottom electrode, a top electrode and a resistance variable layer disposed between the composite bottom electrode and the top electrode. The composite bottom electrode includes a first bottom electrode and a second bottom electrode disposed over the first bottom electrode. A sidewall of the second bottom electrode is laterally recessed from sidewalls of the first bottom electrode layer and the resistance variable layer.



[[Category:H10N70/00]]
[[Category:H10B63/00]]
[[Category:H10N70/20]]
[[Category:CPC_H10N70/841]]