View source for 18597695. Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)

=Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:John D. Hopkins of Meridian ID (US)|John D. Hopkins of Meridian ID (US)]][[Category:John D. Hopkins of Meridian ID (US)]]

[[:Category:Nancy M. Lomeli of Boise ID (US)|Nancy M. Lomeli of Boise ID (US)]][[Category:Nancy M. Lomeli of Boise ID (US)]]

==Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18597695 titled 'Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells

'''Simplified Explanation''': The patent application describes a method of forming liners outside of channel material strings in two tiers, creating void spaces in the second tier. Conductively-doped semiconductive material is then heated to diffuse dopants into the channel material, increasing conductivity.

'''Key Features and Innovation''':
* Formation of liners outside of channel material strings in two tiers
* Creation of void spaces in the second tier
* Diffusion of dopants from conductively-doped semiconductive material into the channel material to increase conductivity

'''Potential Applications''': 
This technology could be used in semiconductor manufacturing processes to improve the performance of electronic devices.

'''Problems Solved''': 
This technology addresses the need for increased conductivity in channel material strings in semiconductor devices.

'''Benefits''': 
The technology can enhance the efficiency and performance of electronic devices by improving conductivity in channel material strings.

'''Commercial Applications''': 
Potential commercial applications include the production of high-performance electronic devices such as smartphones, computers, and other semiconductor-based products.

'''Prior Art''': 
Prior art related to this technology may include research on semiconductor manufacturing processes and methods for increasing conductivity in channel materials.

'''Frequently Updated Research''': 
Researchers may be exploring new ways to further enhance conductivity in channel material strings in semiconductor devices.

'''Questions about the Technology''':
1. What are the specific materials used in the conductively-doped semiconductive material?
2. How does the diffusion process work to increase conductivity in the channel material?


==Original Abstract Submitted==

A liner is formed laterally-outside of individual channel-material strings in one of first tiers and in one of second tiers. The liners are isotropically etched to form void-spaces in the one second tier above the one first tier. Individual of the void-spaces are laterally-between the individual channel-material strings and the second-tier material in the one second tier. Conductively-doped semiconductive material is formed against sidewalls of the channel material of the channel-material strings in the one first tier and that extends upwardly into the void-spaces in the one second tier. The conductively-doped semiconductive material is heated to diffuse conductivity-increasing dopants therein from the void-spaces laterally into the channel material laterally there-adjacent and upwardly into the channel material that is above the void-spaces.



[[Category:H10B43/27]]
[[Category:H01L21/225]]
[[Category:H10B41/27]]
[[Category:CPC_H10B43/27]]