View source for 18596641. SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHODS OF MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHODS OF MANUFACTURING THE SAME=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Yi-Tse Hung of Hsinchu (TW)|Yi-Tse Hung of Hsinchu (TW)]][[Category:Yi-Tse Hung of Hsinchu (TW)]]

[[:Category:Ang-Sheng Chou of Hsinchu (TW)|Ang-Sheng Chou of Hsinchu (TW)]][[Category:Ang-Sheng Chou of Hsinchu (TW)]]

[[:Category:Hung-Li Chiang of Taipei City (TW)|Hung-Li Chiang of Taipei City (TW)]][[Category:Hung-Li Chiang of Taipei City (TW)]]

[[:Category:Tzu-Chiang Chen of Hsinchu City (TW)|Tzu-Chiang Chen of Hsinchu City (TW)]][[Category:Tzu-Chiang Chen of Hsinchu City (TW)]]

[[:Category:Chao-Ching Cheng of Hsinchu City (TW)|Chao-Ching Cheng of Hsinchu City (TW)]][[Category:Chao-Ching Cheng of Hsinchu City (TW)]]

==SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHODS OF MANUFACTURING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18596641 titled 'SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHODS OF MANUFACTURING THE SAME

The semiconductor device described in the abstract includes a gate layer, a channel material layer, a first dielectric layer, and source/drain terminals. The gate layer is positioned over a substrate, with the channel material layer on top, containing a first low dimensional material. The first dielectric layer separates the gate layer from the channel material layer. The source/drain terminals are in contact with the channel material layer, which is partially positioned between them and over the gate layer, with the gate layer situated between the substrate and the source/drain terminals.

* The device features a unique structure with a first low dimensional material in the channel material layer.
* The source/drain terminals are in direct contact with the channel material layer, enhancing performance.
* The gate layer acts as a barrier between the substrate and the source/drain terminals, optimizing functionality.
* The first dielectric layer provides insulation and protection within the device.
* Overall, the design of this semiconductor device aims to improve efficiency and performance in electronic applications.

Potential Applications:
- This technology could be applied in the development of advanced integrated circuits.
- It may find use in high-speed computing systems and other electronic devices requiring efficient semiconductor components.

Problems Solved:
- Enhances performance and efficiency in semiconductor devices.
- Provides a unique structure for improved functionality in electronic applications.

Benefits:
- Improved performance and efficiency in electronic devices.
- Enhanced functionality in integrated circuits and computing systems.

Commercial Applications:
Title: Advanced Semiconductor Devices for Enhanced Electronic Performance
This technology could be utilized in the production of high-performance electronic devices, leading to advancements in computing systems, telecommunications, and other industries requiring efficient semiconductor components.

Questions about the Technology:
1. What are the potential commercial applications of this advanced semiconductor device?
   - The potential commercial applications include high-speed computing systems, telecommunications equipment, and other electronic devices requiring efficient semiconductor components.
2. How does the unique structure of this semiconductor device contribute to its improved performance?
   - The inclusion of a first low dimensional material in the channel material layer, along with the strategic positioning of the source/drain terminals and gate layer, enhances the overall functionality and efficiency of the device.


==Original Abstract Submitted==

A semiconductor device includes a gate layer, a channel material layer, a first dielectric layer and source/drain terminals. The gate layer is disposed over a substrate. The channel material layer is disposed over the gate layer, where a material of the channel material layer includes a first low dimensional material. The first dielectric layer is between the gate layer and the channel material layer. The source/drain terminals are in contact with the channel material layer, where the channel material layer is at least partially disposed between the source/drain terminals and over the gate layer, and the gate layer is disposed between the substrate and the source/drain terminals.



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