View source for 18596461. SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Shigenobu Maeda of Seongnam-si (KR)|Shigenobu Maeda of Seongnam-si (KR)]][[Category:Shigenobu Maeda of Seongnam-si (KR)]]

[[:Category:Hee-Soo Kang of Seoul (KR)|Hee-Soo Kang of Seoul (KR)]][[Category:Hee-Soo Kang of Seoul (KR)]]

[[:Category:Sang-Pil Sim of Seongnam-si (KR)|Sang-Pil Sim of Seongnam-si (KR)]][[Category:Sang-Pil Sim of Seongnam-si (KR)]]

[[:Category:Soo-Hun Hong of Gunpo-si (KR)|Soo-Hun Hong of Gunpo-si (KR)]][[Category:Soo-Hun Hong of Gunpo-si (KR)]]

==SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18596461 titled 'SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS

The semiconductor device described in the patent application includes a field insulation layer with a protruding portion that separates multi-channel active fins and a conductive layer crossing over the protruding portion.

* The field insulation layer has a planar major surface extending in orthogonal directions.
* The protruding portion extends a specific distance from the major surface.
* Multi-channel active fins are positioned on the field insulation layer, separated by the protruding portion.
* A conductive layer extends from the uppermost surface of the protruding portion to cross over it between the active fins.

Potential Applications:
- This technology can be used in the manufacturing of advanced semiconductor devices.
- It may find applications in the development of high-performance electronic devices.

Problems Solved:
- Provides improved insulation and organization of active fins in semiconductor devices.
- Enhances the efficiency and performance of electronic components.

Benefits:
- Increased functionality and performance of semiconductor devices.
- Enhanced reliability and durability of electronic systems.

Commercial Applications:
Title: Advanced Semiconductor Device Technology for Enhanced Performance
This technology can be utilized in the production of cutting-edge electronic devices, catering to industries such as telecommunications, computing, and consumer electronics. The improved efficiency and performance offered by this innovation can lead to the development of faster and more reliable electronic products, meeting the demands of the modern market.

Questions about the Technology:
1. How does the protruding portion in the field insulation layer contribute to the functionality of the semiconductor device?
2. What are the specific advantages of having multi-channel active fins separated by the protruding portion in the device design?


==Original Abstract Submitted==

A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.



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