View source for 18588633. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)

=SEMICONDUCTOR STORAGE DEVICE=


==Organization Name==

[[:Category:Kioxia Corporation|Kioxia Corporation]]


[[Category:Kioxia Corporation]]

==Inventor(s)==

[[:Category:Kiyokazu Ishizaki of Nishitokyo, Tokyo (JP)|Kiyokazu Ishizaki of Nishitokyo, Tokyo (JP)]][[Category:Kiyokazu Ishizaki of Nishitokyo, Tokyo (JP)]]

==SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18588633 titled 'SEMICONDUCTOR STORAGE DEVICE

The semiconductor storage device described in the patent application consists of a wiring pattern on an insulating base material, an insulating film partially covering the wiring pattern, and an electronic component.

* The wiring pattern includes a first pad with an arc-shaped edge and a first wire.
* The insulating film has a first opening larger than the first pad.
* The first wire has three portions - a first portion connected to the first pad inside the first opening extending in a first direction, a second portion connected to the first pad inside the first opening extending in a second direction, and a third portion connected to both the first and second portions.
* The first wire is connected to the first pad within an angular range of not more than 90 degrees in a circumferential direction.

Potential Applications:
- This technology can be used in various semiconductor storage devices to improve wiring patterns and connections.
- It can enhance the performance and reliability of electronic components in storage devices.

Problems Solved:
- The technology addresses issues related to wiring patterns and connections in semiconductor storage devices.
- It improves the efficiency and functionality of electronic components in such devices.

Benefits:
- Enhanced wiring patterns for improved performance.
- Better connectivity and reliability of electronic components.
- Increased efficiency and functionality of semiconductor storage devices.

Commercial Applications:
Title: Advanced Semiconductor Storage Device Technology
This technology can be utilized in the manufacturing of high-performance storage devices for various industries such as consumer electronics, data storage, and telecommunications. The improved wiring patterns and connections can lead to more reliable and efficient devices, catering to the growing demand for faster and more advanced storage solutions.

Questions about the Technology:
1. How does the angular range of the wiring pattern contribute to the overall performance of the semiconductor storage device?
- The angular range ensures efficient and reliable connections between the wiring pattern and the electronic components, improving the functionality of the device.
2. What are the specific advantages of using an insulating film with larger openings in the wiring pattern?
- The larger openings allow for easier access to the wiring pattern, facilitating the connection process and enhancing the overall performance of the device.


==Original Abstract Submitted==

A semiconductor storage device includes a wiring pattern on an insulating base material; an insulating film covering partially the wiring pattern; and an electronic component. The wiring pattern includes a first pad having an edge in an arc shape, and a first wire. The insulating film has a first opening larger than the first pad. The first wire has a first portion, a second portion, and a third portion. The first portion is connected to the first pad inside the first opening extends in a first direction. The second portion is connected to the first pad inside the first opening and extends in a second direction. The third portion is connected to the first portion and the second portion. The first wire is connected with the first pad in an angular range of not more than 90 degrees in a circumferential direction of the first pad.



[[Category:H05K1/11]]
[[Category:H01L23/31]]
[[Category:H01L23/498]]
[[Category:H01L25/065]]
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