View source for 18588621. MEMORY DEVICE simplified abstract (KIOXIA CORPORATION)

=MEMORY DEVICE=


==Organization Name==

[[:Category:KIOXIA CORPORATION|KIOXIA CORPORATION]]


[[Category:KIOXIA CORPORATION]]

==Inventor(s)==

[[:Category:Haruka Sakuma of Yokkaichi Mie (JP)|Haruka Sakuma of Yokkaichi Mie (JP)]][[Category:Haruka Sakuma of Yokkaichi Mie (JP)]]

[[:Category:Masumi Saitoh of Yokohama Kanagawa (JP)|Masumi Saitoh of Yokohama Kanagawa (JP)]][[Category:Masumi Saitoh of Yokohama Kanagawa (JP)]]

[[:Category:Kouji Matsuo of Ama Aichi (JP)|Kouji Matsuo of Ama Aichi (JP)]][[Category:Kouji Matsuo of Ama Aichi (JP)]]

==MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18588621 titled 'MEMORY DEVICE

The memory device described in the patent application consists of multiple layers including electrode layers, conductive layers, insulating layers, semiconductor layers, and gate electrode layers.

* The first electrode layer extends in a first direction intersecting a surface of a substrate.
* The second electrode layer also extends in the first direction.
* The first conductive layer surrounds the first and second electrode layers.
* The first insulating layer, made of hafnium oxide and/or zirconium oxide, separates the first electrode layer from the first conductive layer.
* The second insulating layer, also made of hafnium oxide and/or zirconium oxide, separates the second electrode layer from the first conductive layer.
* The first gate electrode layer extends in the first direction and is surrounded by a first semiconductor layer, which is electrically connected to the first conductive layer.
* The first gate insulating layer, surrounding the first gate electrode layer, separates it from the first semiconductor layer.

Potential Applications:
- This technology can be used in various memory devices such as flash memory, DRAM, and SRAM.
- It can also be applied in other semiconductor devices requiring high performance and reliability.

Problems Solved:
- The technology addresses the need for improved memory devices with enhanced performance and durability.
- It solves issues related to data storage and retrieval in electronic devices.

Benefits:
- Increased memory device efficiency and speed.
- Enhanced data retention and reliability.
- Reduction in power consumption and heat generation.

Commercial Applications:
Title: Advanced Memory Devices for High-Performance Electronics
This technology has significant commercial potential in the semiconductor industry, particularly in the development of faster and more reliable memory devices for consumer electronics, data centers, and other high-tech applications.

Questions about Memory Devices:
1. How does the use of hafnium oxide and zirconium oxide in the insulating layers improve the performance of the memory device?
- The incorporation of hafnium oxide and zirconium oxide in the insulating layers enhances the dielectric properties, leading to better insulation and reduced leakage currents, ultimately improving the overall performance and reliability of the memory device.

2. What sets this memory device apart from existing technologies in terms of speed and efficiency?
- This memory device stands out due to its innovative design incorporating multiple layers with specific materials, resulting in faster data access, lower power consumption, and increased durability compared to traditional memory devices.


==Original Abstract Submitted==

A memory device includes: a first electrode layer extending in a first direction intersecting a surface of a substrate; a second electrode layer extending in the first direction; a first conductive layer surrounding the first electrode layer and the second electrode layer; a first insulating layer between the first electrode layer and the first conductive layer, surrounding the first electrode layer, and including hafnium oxide and/or zirconium oxide; a second insulating layer between the second electrode layer and the first conductive layer, surrounding the second electrode layer, and including hafnium oxide and/or zirconium oxide; a first gate electrode layer extending in the first direction, a first semiconductor layer surrounding the first gate electrode layer and electrically connected to the first conductive layer; and a first gate insulating layer between the first gate electrode layer and the first semiconductor layer and surrounding the first gate electrode layer.



[[Category:H10B53/20]]
[[Category:H01L21/28]]
[[Category:H01L23/528]]
[[Category:H01L29/51]]
[[Category:H10B53/10]]
[[Category:CPC_H10B53/20]]