View source for 18584387. SEMICONDUCTOR DEVICE INCLUDING VERTICAL TRANSISTOR WITH BACK SIDE POWER STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=SEMICONDUCTOR DEVICE INCLUDING VERTICAL TRANSISTOR WITH BACK SIDE POWER STRUCTURE=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Shih-Wei Peng of Hsinchu City (TW)|Shih-Wei Peng of Hsinchu City (TW)]][[Category:Shih-Wei Peng of Hsinchu City (TW)]]

[[:Category:Te-Hsin Chiu of Hsinchu City (TW)|Te-Hsin Chiu of Hsinchu City (TW)]][[Category:Te-Hsin Chiu of Hsinchu City (TW)]]

[[:Category:Jiann-Tyng Tzeng of Hsin-Chu (TW)|Jiann-Tyng Tzeng of Hsin-Chu (TW)]][[Category:Jiann-Tyng Tzeng of Hsin-Chu (TW)]]

==SEMICONDUCTOR DEVICE INCLUDING VERTICAL TRANSISTOR WITH BACK SIDE POWER STRUCTURE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18584387 titled 'SEMICONDUCTOR DEVICE INCLUDING VERTICAL TRANSISTOR WITH BACK SIDE POWER STRUCTURE

==Simplified Explanation==
The patent application describes a semiconductor device with vertical transistors and a back side power structure.

==Key Features and Innovation==
* Gate structure with gate pad and gate contact
* Two transistors formed by source regions, drain regions, and gate structure
* Metal line below source regions, connected to power supply

==Potential Applications==
This technology can be used in power electronics, integrated circuits, and semiconductor devices.

==Problems Solved==
This innovation addresses the need for efficient power management and improved performance in semiconductor devices.

==Benefits==
* Enhanced power efficiency
* Improved performance
* Compact design

==Commercial Applications==
* Power electronics industry
* Semiconductor manufacturing companies
* Consumer electronics market

==Prior Art==
Readers can explore prior patents related to vertical transistors, back side power structures, and semiconductor device design.

==Frequently Updated Research==
Researchers are constantly developing new methods for optimizing power structures in semiconductor devices.

==Questions about Semiconductor Device with Vertical Transistors and Back Side Power Structure==
===What are the potential applications of this semiconductor device technology?===
This technology can be applied in various industries such as power electronics, integrated circuits, and semiconductor devices.

===How does this innovation improve power management in semiconductor devices?===
By utilizing vertical transistors and a back side power structure, this technology enhances power efficiency and overall performance in semiconductor devices.


==Original Abstract Submitted==

A semiconductor device including vertical transistors with a back side power structure, and methods of making the same are described. In one example, a described semiconductor structure includes: a gate structure including a gate pad and a gate contact on the gate pad; a first source region disposed below the gate pad; a first drain region disposed on the gate pad, wherein the first source region, the first drain region and the gate structure form a first transistor; a second source region disposed below the gate pad; a second drain region disposed on the gate pad, wherein the second source region, the second drain region and the gate structure form a second transistor; and at least one metal line that is below the first source region and the second source region, and is electrically connected to at least one power supply.



[[Category:H01L29/06]]
[[Category:H01L23/522]]
[[Category:H01L25/11]]
[[Category:H01L29/423]]
[[Category:H01L29/786]]
[[Category:CPC_H01L29/0673]]