View source for 18577517. SEMICONDUCTOR LIGHT-EMITTING ELEMENT, VEHICLE LAMP, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT simplified abstract (Koito Manufacturing Co., Ltd.)

=SEMICONDUCTOR LIGHT-EMITTING ELEMENT, VEHICLE LAMP, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT=


==Organization Name==

[[:Category:Koito Manufacturing Co., Ltd.|Koito Manufacturing Co., Ltd.]]


[[Category:Koito Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Hiroaki Kanaoka of Shizuoka (JP)|Hiroaki Kanaoka of Shizuoka (JP)]][[Category:Hiroaki Kanaoka of Shizuoka (JP)]]

[[:Category:Akihiro Nomura of Shizuoka (JP)|Akihiro Nomura of Shizuoka (JP)]][[Category:Akihiro Nomura of Shizuoka (JP)]]

==SEMICONDUCTOR LIGHT-EMITTING ELEMENT, VEHICLE LAMP, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18577517 titled 'SEMICONDUCTOR LIGHT-EMITTING ELEMENT, VEHICLE LAMP, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT

The semiconductor light-emitting element described in the patent application consists of a growth substrate, multiple columnar semiconductor layers on the substrate, and an embedded layer covering these layers. Each columnar semiconductor layer comprises an n-type nanowire layer at the center and an active layer on the outer periphery side of the nanowire layer. The embedded layer creates a gap between adjacent columnar semiconductor layers.

* Growth substrate
* Columnar semiconductor layers
* Embedded layer
* N-type nanowire layer
* Active layer
* Gap between layers

Potential Applications:
- LED lighting
- Display technology
- Optical communication

Problems Solved:
- Enhancing light emission efficiency
- Improving semiconductor device performance

Benefits:
- Higher brightness
- Energy efficiency
- Enhanced device reliability

Commercial Applications:
Title: "Revolutionizing LED Technology: Applications and Market Impact"
This technology can be used in various commercial applications such as LED lighting, display panels, and optical communication devices. The market implications include improved product performance, energy savings, and increased demand for advanced semiconductor devices.

Prior Art:
Readers can explore prior research on semiconductor nanowires, LED technology, and semiconductor device fabrication methods to understand the background of this innovation.

Frequently Updated Research:
Researchers are continuously exploring ways to optimize the design and performance of semiconductor light-emitting elements. Stay updated on the latest advancements in nanowire technology and LED applications for potential future developments.

Questions about Semiconductor Light-Emitting Elements:
1. How does the embedded layer contribute to the efficiency of the semiconductor light-emitting element?
The embedded layer helps define the spacing between the columnar semiconductor layers, which can enhance light emission efficiency by reducing interference between adjacent layers.

2. What are the key advantages of using nanowire layers in semiconductor devices?
Nanowire layers offer unique properties such as high surface area-to-volume ratio, improved carrier transport, and flexibility in device design, making them ideal for enhancing the performance of semiconductor devices.


==Original Abstract Submitted==

A semiconductor light-emitting element includes: a growth substrate; a plurality of columnar semiconductor layers on the growth substrate; and an embedded layer with which the plurality of columnar semiconductor layers are covered. Each of the plurality of columnar semiconductor layers includes: an n-type nanowire layer at a center of each of the columnar semiconductor layers; and an active layer on an outer periphery side of the n-type nanowire layer. The embedded layer defines a gap above the growth substrate between adjacent columnar semiconductor layers of the plurality of columnar semiconductor layers.



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