View source for 18566303. Semiconductor Device and Manufacturing Method for Semiconductor Device simplified abstract (HITACHI ASTEMO, LTD.)

=Semiconductor Device and Manufacturing Method for Semiconductor Device=


==Organization Name==

[[:Category:HITACHI ASTEMO, LTD.|HITACHI ASTEMO, LTD.]]


[[Category:HITACHI ASTEMO, LTD.]]

==Inventor(s)==

[[:Category:Osamu Ikeda of Tokyo (JP)|Osamu Ikeda of Tokyo (JP)]][[Category:Osamu Ikeda of Tokyo (JP)]]

[[:Category:Naoki Sakurai of Hitachinaka-shi (JP)|Naoki Sakurai of Hitachinaka-shi (JP)]][[Category:Naoki Sakurai of Hitachinaka-shi (JP)]]

[[:Category:Takayuki Oshima of Hitachinaka-shi (JP)|Takayuki Oshima of Hitachinaka-shi (JP)]][[Category:Takayuki Oshima of Hitachinaka-shi (JP)]]

[[:Category:Takuma Hakuto of Hitachinaka-shi (JP)|Takuma Hakuto of Hitachinaka-shi (JP)]][[Category:Takuma Hakuto of Hitachinaka-shi (JP)]]

==Semiconductor Device and Manufacturing Method for Semiconductor Device - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18566303 titled 'Semiconductor Device and Manufacturing Method for Semiconductor Device

The semiconductor device described in the abstract includes a semiconductor element with an Ni—V electrode and a conductor bonded via Sn-based lead-free solder. Adjacent to the interface between the semiconductor element and the solder, there are layers of Sn—V compound and (Ni, Cu)3Sn4 compound.

* The semiconductor device features an innovative bonding method using Sn-based lead-free solder and Ni—V electrode.
* Formation of Sn—V compound layer and (Ni, Cu)3Sn4 compound layer enhances the bond between the semiconductor element and the solder.
* The manufacturing method involves causing a reaction between the solder and the Ni—V electrode to form the compound layers, ensuring a strong bond.
* Leaving an unreacted layer of the Ni—V electrode after the formation of the Sn—V layer maintains the integrity of the electrode.

Potential Applications:
- This technology can be applied in various semiconductor devices requiring reliable bonding between semiconductor elements and conductors.
- It can be used in electronic devices, power systems, and communication equipment where secure connections are essential.

Problems Solved:
- Addresses the challenge of achieving strong and durable bonds between semiconductor elements and conductors in lead-free solder applications.
- Ensures the integrity and reliability of the connections in semiconductor devices.

Benefits:
- Improved bond strength and reliability in semiconductor devices.
- Enhanced performance and longevity of electronic components.
- Compliance with lead-free solder requirements for environmental sustainability.

Commercial Applications:
Title: Advanced Semiconductor Bonding Technology for Enhanced Device Reliability
This technology can be commercialized in the semiconductor industry for manufacturing high-performance electronic devices with superior bond strength and reliability. It can cater to a wide range of applications in consumer electronics, automotive electronics, industrial equipment, and telecommunications devices.

Questions about Semiconductor Bonding Technology:
1. How does the formation of compound layers improve the bond between the semiconductor element and the solder?
   - The compound layers enhance the adhesion and reliability of the bond by providing a strong interface between the semiconductor element and the solder.
2. What are the key advantages of using Sn-based lead-free solder in semiconductor devices?
   - Sn-based lead-free solder offers environmental benefits by eliminating hazardous materials like lead while maintaining reliable bonding properties.


==Original Abstract Submitted==

A semiconductor device includes a semiconductor element having an Ni—V electrode and a conductor, the semiconductor element and the conductor being bonded via Sn-based lead-free solder. In the semiconductor device, an Sn—V compound layer and an (Ni, Cu)3Sn4 compound layer adjacent to the Sn—V compound are formed adjacent to an interface between the semiconductor element and the Sn-based lead-free solder. A manufacturing method for a semiconductor device according to the present invention includes: causing the Sn-based lead-free solder and the Ni—V electrode to react with each other to form an Sn—V layer and an (Ni, Cu)3Sn4 compound layer; and following formation of the Sn—V layer, leaving an unreacted layer of the Ni—V electrode, the unreacted layer having not reacted with the Sn-based lead-free solder, intact.



[[Category:H01L23/00]]
[[Category:CPC_H01L24/29]]