View source for 18557573. PHOTODETECTOR AND DISTANCE MEASUREMENT APPARATUS simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)

=PHOTODETECTOR AND DISTANCE MEASUREMENT APPARATUS=


==Organization Name==

[[:Category:SONY SEMICONDUCTOR SOLUTIONS CORPORATION|SONY SEMICONDUCTOR SOLUTIONS CORPORATION]]


[[Category:SONY SEMICONDUCTOR SOLUTIONS CORPORATION]]

==Inventor(s)==

[[:Category:YUSUKE Matsumura of KANAGAWA (JP)|YUSUKE Matsumura of KANAGAWA (JP)]][[Category:YUSUKE Matsumura of KANAGAWA (JP)]]

==PHOTODETECTOR AND DISTANCE MEASUREMENT APPARATUS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18557573 titled 'PHOTODETECTOR AND DISTANCE MEASUREMENT APPARATUS

'''Simplified Explanation:'''
The photodetector described in the patent application consists of two substrates, each with specific functions, electrodes for electrical connections, and sections for light reception and charge multiplication.

* The first substrate has a light receiving surface with pixels arranged in an array, each containing a light receiving section that converts received light into electric charge.
* The second substrate, with a wider band gap than the first, is placed on the opposite side of the first substrate and contains a multiplication section for applying avalanche multiplication to the electric charge generated by the light receiving section.
* The first electrode is connected to the light receiving section on the first substrate, while the second electrode is connected to the multiplication section on the second substrate.

'''Key Features and Innovation:'''
* Dual-substrate design for enhanced functionality.
* Light receiving sections for photoelectric conversion.
* Avalanche multiplication for signal amplification.
* Specific electrodes for electrical connections.

'''Potential Applications:'''
This technology can be used in various applications such as:
* Imaging devices
* Optical communication systems
* Remote sensing equipment

'''Problems Solved:'''
* Signal amplification in photodetection.
* Enhanced sensitivity to light.
* Improved performance in low-light conditions.

'''Benefits:'''
* Higher signal-to-noise ratio.
* Increased detection accuracy.
* Improved overall performance of photodetectors.

'''Commercial Applications:'''
Potential commercial uses include:
* Surveillance systems
* Medical imaging devices
* Scientific research equipment

'''Prior Art:'''
Readers interested in prior art related to this technology can explore research papers, patents, and industry publications on photodetectors, avalanche multiplication, and signal amplification in light detection technologies.

'''Frequently Updated Research:'''
Stay updated on the latest advancements in photodetector technology, avalanche multiplication techniques, and signal processing algorithms for improved light detection capabilities.

'''Questions about Photodetectors:'''
1. What are the key advantages of using a dual-substrate design in photodetectors?
2. How does avalanche multiplication enhance the performance of photodetectors?


==Original Abstract Submitted==

A photodetector according to an embodiment of the present disclosure includes a first substrate, a second substrate, a first electrode, and a second electrode. The first substrate has a first surface serving as a light receiving surface and a second surface opposed to the first surface, and has a plurality of pixels disposed in an arrayed manner. The first substrate includes a light receiving section provided for each of the pixels. The light receiving section generates, through photoelectric conversion, electric charge corresponding to the amount of received light. The second substrate is disposed on a side of the second surface of the first substrate, has a third surface directly opposed to the second surface, and also has a fourth surface opposed to the third surface. The second substrate has a band gap wider than a band gap of the first substrate. The second substrate includes a multiplication section provided for each of the pixels. The multiplication section applies avalanche multiplication to the electric charge generated at the light receiving section. The first electrode is provided at the first surface of the first substrate and is electrically coupled to the light receiving section. The second electrode is provided at the fourth surface of the second substrate and is electrically coupled to the multiplication section.



[[Category:G01S7/481]]
[[Category:G01S7/4865]]
[[Category:G01S17/10]]
[[Category:H01L23/00]]
[[Category:H01L27/146]]
[[Category:CPC_G01S7/4816]]