View source for 18554168. SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING AND OPERATING THE DEVICE simplified abstract (Microsoft Technology Licensing, LLC)

=SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING AND OPERATING THE DEVICE=


==Organization Name==

[[:Category:Microsoft Technology Licensing, LLC|Microsoft Technology Licensing, LLC]]


[[Category:Microsoft Technology Licensing, LLC]]

==Inventor(s)==

[[:Category:Pavel Aseev of Rijswijk (NL)|Pavel Aseev of Rijswijk (NL)]][[Category:Pavel Aseev of Rijswijk (NL)]]

==SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING AND OPERATING THE DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18554168 titled 'SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING AND OPERATING THE DEVICE

==Simplified Explanation==
A semiconductor device with a nanowire structure is described, allowing for bottom gating of the quantum well without the need for the substrate to incorporate the gate.

* The semiconductor device includes a crystalline substrate and a nanowire epitaxially arranged on the substrate.
* The nanowire consists of a gating layer, a quantum well, an intermediate barrier, and an upper barrier.
* The gating layer enables bottom gating of the quantum well without requiring the substrate to have the gate.
* The device can be operated using a specific method, and it can be fabricated using a particular process.

==Key Features and Innovation==
* Incorporation of a gating layer in the nanowire structure enables bottom gating of the quantum well.
* Eliminates the need for the substrate to include the bottom gate.
* Provides a method of operating the semiconductor device and a method of fabricating it.

==Potential Applications==
* Nanoelectronics
* Quantum computing
* Optoelectronics

==Problems Solved==
* Simplifies the design of semiconductor devices.
* Enables more efficient operation of quantum well structures.
* Facilitates the fabrication process.

==Benefits==
* Improved performance of semiconductor devices.
* Enhanced control over quantum well structures.
* Simplified manufacturing process.

==Commercial Applications==
===Nanoelectronics Innovation for Enhanced Device Performance===
This semiconductor device innovation can revolutionize the field of nanoelectronics by offering improved performance and simplified design processes. The ability to bottom gate the quantum well without requiring the substrate to incorporate the gate opens up new possibilities for enhanced device functionality and efficiency. This innovation could find applications in various industries, including quantum computing, optoelectronics, and advanced semiconductor technologies.

==Prior Art==
Prior research in the field of nanowire structures and semiconductor devices may provide valuable insights into the development of this technology. Researchers can explore existing literature on nanowire-based devices, quantum well structures, and bottom gating techniques to understand the evolution of this innovation.

==Frequently Updated Research==
Researchers are continually exploring new materials and fabrication techniques to enhance the performance of semiconductor devices. Stay updated on the latest advancements in nanowire technology, quantum well structures, and bottom gating methods to remain at the forefront of semiconductor innovation.

==Questions about Semiconductor Device Innovation==
===What are the potential applications of this semiconductor device innovation?===
The potential applications of this semiconductor device innovation include nanoelectronics, quantum computing, and optoelectronics. These fields could benefit from the improved performance and simplified design processes offered by this technology.

===How does the incorporation of a gating layer in the nanowire structure impact the operation of the semiconductor device?===
The gating layer enables bottom gating of the quantum well without requiring the substrate to include the gate. This design feature simplifies the operation of the semiconductor device and enhances its efficiency.


==Original Abstract Submitted==

A semiconductor device comprises a crystalline substrate and a nanowire arranged epitaxially on the crystalline substrate. The nanowire comprises: a gating layer arranged over the substrate, a quantum well arranged over the gating layer, an intermediate barrier arranged between the gating layer and the quantum well, and an upper barrier arranged over the quantum well. By incorporating a gating layer into the nanowire, bottom gating of the quantum well is made possible without requiring the substrate to incorporate the bottom gate. Also provided are a method of operating the semiconductor device, and a method of fabricating the semiconductor device.



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