View source for 18546593. Semiconductor Emitter simplified abstract (ams-OSRAM International GmbH)

=Semiconductor Emitter=


==Organization Name==

[[:Category:ams-OSRAM International GmbH|ams-OSRAM International GmbH]]


[[Category:ams-OSRAM International GmbH]]

==Inventor(s)==

[[:Category:Bruno Jentzsch of Regensburg (DE)|Bruno Jentzsch of Regensburg (DE)]][[Category:Bruno Jentzsch of Regensburg (DE)]]

[[:Category:Hubert Halbritter of Dietfurt (DE)|Hubert Halbritter of Dietfurt (DE)]][[Category:Hubert Halbritter of Dietfurt (DE)]]

[[:Category:Alexander Behres of Pfatter (DE)|Alexander Behres of Pfatter (DE)]][[Category:Alexander Behres of Pfatter (DE)]]

[[:Category:Alvaro Gomez-lglesias of Regensburg (DE)|Alvaro Gomez-lglesias of Regensburg (DE)]][[Category:Alvaro Gomez-lglesias of Regensburg (DE)]]

[[:Category:Christian Lauer of Pettendorf (DE)|Christian Lauer of Pettendorf (DE)]][[Category:Christian Lauer of Pettendorf (DE)]]

[[:Category:Simon Baumann of Regensburg (DE)|Simon Baumann of Regensburg (DE)]][[Category:Simon Baumann of Regensburg (DE)]]

==Semiconductor Emitter - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18546593 titled 'Semiconductor Emitter

'''Simplified Explanation:'''
The patent application describes a semiconductor emitter with a unique structure, including active zones with quantum well layers and barrier layers, as well as tunnel diodes between the active zones.

* The semiconductor emitter has a semiconductor layer sequence with multiple active zones.
* Each active zone contains quantum well layers and barrier layers.
* Tunnel diodes are located between adjacent active zones along the growth direction.
* The tunnel diodes have a thickness of up to 40 nm.
* The distance between adjacent barrier layers facing the tunnel diode is up to 50 nm.

'''Key Features and Innovation:'''
* Integration of tunnel diodes in a semiconductor emitter design.
* Optimization of tunnel diode thickness and spacing for improved performance.
* Enhanced efficiency and functionality of the semiconductor emitter.

'''Potential Applications:'''
* Optoelectronic devices.
* High-speed communication systems.
* Quantum computing technologies.

'''Problems Solved:'''
* Improving the efficiency of semiconductor emitters.
* Enhancing the performance of optoelectronic devices.
* Facilitating advancements in quantum computing.

'''Benefits:'''
* Increased efficiency and performance.
* Enhanced functionality and reliability.
* Potential for advancements in various technological fields.

'''Commercial Applications:'''
The technology could be utilized in the development of high-performance optoelectronic devices for telecommunications, data processing, and quantum computing applications.

'''Prior Art:'''
Prior research in semiconductor emitter design and tunnel diode integration may provide insights into the development of this technology.

'''Frequently Updated Research:'''
Ongoing research in semiconductor materials and device design may lead to further advancements in the field of semiconductor emitters with tunnel diodes.

'''Questions about Semiconductor Emitters with Tunnel Diodes:'''
1. How do tunnel diodes impact the performance of semiconductor emitters?
2. What are the potential challenges in scaling up this technology for commercial applications?


==Original Abstract Submitted==

In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.



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