View source for 18546168. VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUPT END POINT DETECTION SIGNAL DURING THE PRODUCTION OF SUCH A VERTICAL SEMICONDUCTOR COMPONENT simplified abstract (Robert Bosch GmbH)

=VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUPT END POINT DETECTION SIGNAL DURING THE PRODUCTION OF SUCH A VERTICAL SEMICONDUCTOR COMPONENT=


==Organization Name==

[[:Category:Robert Bosch GmbH|Robert Bosch GmbH]]


[[Category:Robert Bosch GmbH]]

==Inventor(s)==

[[:Category:Christian Huber of Ludwigsburg DE (US)|Christian Huber of Ludwigsburg DE (US)]][[Category:Christian Huber of Ludwigsburg DE (US)]]

[[:Category:Roland Puesche of Rommelsbach DE (US)|Roland Puesche of Rommelsbach DE (US)]][[Category:Roland Puesche of Rommelsbach DE (US)]]

==VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUPT END POINT DETECTION SIGNAL DURING THE PRODUCTION OF SUCH A VERTICAL SEMICONDUCTOR COMPONENT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18546168 titled 'VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUPT END POINT DETECTION SIGNAL DURING THE PRODUCTION OF SUCH A VERTICAL SEMICONDUCTOR COMPONENT

==Simplified Explanation==

The abstract describes a vertical semiconductor component designed for generating an abrupt end point detection signal. The component includes a semiconductor substrate with front and rear faces, a buffer layer with second chemical elements, a semiconductor contact layer with an active region, and an etching control layer with third chemical elements.

* The semiconductor component is vertical in design, with different layers serving specific functions.
* The buffer layer is positioned on the front face of the semiconductor substrate and contains chemical elements different from those in the substrate.
* The semiconductor contact layer hosts the active region of the component and is situated on top of the buffer layer.
* An etching control layer, with chemical elements distinct from the substrate and buffer layer, is placed between the buffer layer and the semiconductor contact layer.

== Potential Applications ==
The technology could be applied in semiconductor manufacturing processes, particularly in the production of components requiring precise end point detection signals.

== Problems Solved ==
This innovation addresses the need for accurate end point detection signals in semiconductor fabrication, ensuring the quality and efficiency of the manufacturing process.

== Benefits ==
- Enhanced precision in end point detection
- Improved quality control in semiconductor production
- Increased efficiency in manufacturing processes

== Potential Commercial Applications ==
"Vertical Semiconductor Component for End Point Detection Signal Generation" could find applications in industries such as electronics, telecommunications, and automotive, where semiconductor components are crucial for various devices and systems.

== Possible Prior Art ==
There may be prior art related to semiconductor components designed for end point detection signals in semiconductor manufacturing processes. Research into existing patents and publications in the field could reveal similar technologies.

=== Unanswered Questions ===

=== How does this technology compare to existing end point detection methods in semiconductor manufacturing? ===

The article does not provide a direct comparison between this technology and other existing methods for end point detection in semiconductor manufacturing. It would be beneficial to understand the advantages and disadvantages of this innovation in relation to current practices.

=== What are the specific chemical elements used in the buffer layer and etching control layer, and how do they contribute to the functionality of the vertical semiconductor component? ===

The abstract mentions the presence of different chemical elements in the buffer layer and etching control layer, but does not specify which elements are used. Understanding the role of these elements in the performance of the semiconductor component would provide valuable insights into the technology's design and functionality.


==Original Abstract Submitted==

A vertical semiconductor component for generating an abrupt end point detection signal. The vertical semiconductor component includes: a semiconductor substrate which has a front face and a rear face, the front face being opposite the rear face, and the semiconductor substrate having first chemical elements; a buffer layer which is arranged on the front face of the semiconductor substrate, the buffer layer having second chemical elements; and a semiconductor contact layer which is arranged on the buffer layer, an active region of the vertical semiconductor component being arranged on the semiconductor contact layer. An etching control layer is arranged between the buffer layer and the semiconductor contact layer, the etching control layer having at least one third chemical element which differs from the first chemical elements and the second chemical elements.



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