View source for 18542627. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR DEVICES=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Cheoljin Cho of Suwon-si (KR)|Cheoljin Cho of Suwon-si (KR)]][[Category:Cheoljin Cho of Suwon-si (KR)]]

[[:Category:Yukyung Shin of Suwon-si (KR)|Yukyung Shin of Suwon-si (KR)]][[Category:Yukyung Shin of Suwon-si (KR)]]

[[:Category:Changhwa Jung of Suwon-si (KR)|Changhwa Jung of Suwon-si (KR)]][[Category:Changhwa Jung of Suwon-si (KR)]]

[[:Category:Jieun Lee of Suwon-si (KR)|Jieun Lee of Suwon-si (KR)]][[Category:Jieun Lee of Suwon-si (KR)]]

[[:Category:Jayun Choi of Suwon-si (KR)|Jayun Choi of Suwon-si (KR)]][[Category:Jayun Choi of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18542627 titled 'SEMICONDUCTOR DEVICES

The semiconductor device described in the patent application consists of a substrate, a first electrode, a multilayer dielectric structure, and a second electrode. The multilayer dielectric structure includes dielectric films with specific compositions, such as crystalline TiO or crystalline SrTiO, and a high-k dielectric film with a tetragonal crystal structure.

* The semiconductor device features a multilayer dielectric structure with specific dielectric film compositions, enhancing its performance.
* The inclusion of crystalline TiO or crystalline SrTiO in the dielectric films improves the device's properties.
* The high-k dielectric film with a tetragonal crystal structure in the second dielectric film further enhances the device's functionality.
* The device design aims to optimize performance and efficiency in semiconductor applications.
* The innovative dielectric structure contributes to the overall reliability and stability of the semiconductor device.

Potential Applications:
This technology can be applied in various semiconductor devices, such as memory storage, integrated circuits, and sensors.

Problems Solved:
The technology addresses the need for improved dielectric materials in semiconductor devices to enhance performance and reliability.

Benefits:
The semiconductor device with this innovative dielectric structure offers enhanced performance, reliability, and efficiency in various applications.

Commercial Applications:
This technology has significant commercial potential in the semiconductor industry, particularly in the development of advanced electronic devices and components.

Questions about the technology:
1. How does the specific composition of the dielectric films contribute to the performance of the semiconductor device?
2. What are the potential implications of using a high-k dielectric film with a tetragonal crystal structure in semiconductor applications?


==Original Abstract Submitted==

A semiconductor device includes a substrate, a first electrode disposed above the substrate, a multilayer dielectric structure configured to cover the first electrode, and a second electrode configured to cover the multilayer dielectric structure. The multilayer dielectric structure includes a plurality of dielectric films, a first dielectric film of the plurality of dielectric films includes crystalline TiOor crystalline SrTiO, and a second dielectric film of the plurality of dielectric films is in contact with the first dielectric film and includes a high-k dielectric film having a tetragonal crystal structure.



[[Category:H10B12/00]]
[[Category:CPC_H10B12/315]]