View source for 18534283. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING NON-CONFORMAL SELECTIVE DEPOSITION OF SPACERS IN MEMORY OPENINGS simplified abstract (SanDisk Technologies LLC)

=THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING NON-CONFORMAL SELECTIVE DEPOSITION OF SPACERS IN MEMORY OPENINGS=


==Organization Name==

[[:Category:SanDisk Technologies LLC|SanDisk Technologies LLC]]


[[Category:SanDisk Technologies LLC]]

==Inventor(s)==

[[:Category:Kartik Sondhi of Milpitas CA (US)|Kartik Sondhi of Milpitas CA (US)]][[Category:Kartik Sondhi of Milpitas CA (US)]]

[[:Category:Roshan Jayakhar Tirukkonda of Milpitas CA (US)|Roshan Jayakhar Tirukkonda of Milpitas CA (US)]][[Category:Roshan Jayakhar Tirukkonda of Milpitas CA (US)]]

[[:Category:Bing Zhou of San Jose CA (US)|Bing Zhou of San Jose CA (US)]][[Category:Bing Zhou of San Jose CA (US)]]

[[:Category:Senaka Kanakamedala of San Jose CA (US)|Senaka Kanakamedala of San Jose CA (US)]][[Category:Senaka Kanakamedala of San Jose CA (US)]]

==THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING NON-CONFORMAL SELECTIVE DEPOSITION OF SPACERS IN MEMORY OPENINGS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18534283 titled 'THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING NON-CONFORMAL SELECTIVE DEPOSITION OF SPACERS IN MEMORY OPENINGS

The memory device described in the patent application consists of a vertical stack of insulating layers and electrically conductive layers over a substrate, with a memory opening extending through the stack. Within the memory opening, there is a memory opening fill structure containing a vertical stack of memory elements and a vertical semiconductor channel, along with insulating spacers of varying thicknesses at different levels between the memory opening fill structure and the insulating layers.

* The memory device features an alternating stack of insulating and conductive layers.
* A memory opening extends vertically through the stack.
* The memory opening fill structure includes memory elements and a semiconductor channel.
* Insulating spacers of different thicknesses are present at various levels within the device.
* The thickness of the insulating spacers increases with vertical distance from the substrate.

Potential Applications:
- This technology could be used in the development of high-density memory devices for various electronic applications.
- It may find applications in data storage systems, mobile devices, and computing devices.

Problems Solved:
- The memory device addresses the need for increased memory density in electronic devices.
- It provides a solution for improving the performance and efficiency of memory systems.

Benefits:
- Higher memory density leading to increased storage capacity.
- Enhanced performance and efficiency of memory devices.
- Potential cost savings in memory device manufacturing.

Commercial Applications:
Title: High-Density Memory Devices for Electronic Applications
This technology could be commercially applied in the production of memory devices for consumer electronics, data centers, and other computing applications. The increased memory density and improved performance offered by this innovation could make it a valuable asset in the competitive memory device market.

Questions about Memory Devices:
1. How does the varying thickness of insulating spacers impact the performance of the memory device?
   - The varying thickness of insulating spacers helps optimize the electrical properties within the device, contributing to improved performance and efficiency.
2. What are the potential challenges in scaling up this technology for mass production?
   - Scaling up the production of high-density memory devices may involve challenges related to manufacturing processes, quality control, and cost management.


==Original Abstract Submitted==

A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and including a vertical stack of memory elements and a vertical semiconductor channel, and a vertical stack of insulating spacers located at levels of the insulating layers between the memory opening fill structure and the insulating layers. The insulating spacers have different thicknesses such that the thicknesses of the insulating spacers increase with an upward vertical distance from a horizontal plane including a top surface of the substrate.



[[Category:H10B43/27]]
[[Category:H10B41/27]]
[[Category:CPC_H10B43/27]]