View source for 18531359. ADVANCED ETCHING TECHNOLOGIES FOR STRAIGHT, TALL AND UNIFORM FINS ACROSS MULTIPLE FIN PITCH STRUCTURES simplified abstract (Intel Corporation)

=ADVANCED ETCHING TECHNOLOGIES FOR STRAIGHT, TALL AND UNIFORM FINS ACROSS MULTIPLE FIN PITCH STRUCTURES=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Muralidhar S. Ambati of Hillsboro OR (US)|Muralidhar S. Ambati of Hillsboro OR (US)]][[Category:Muralidhar S. Ambati of Hillsboro OR (US)]]

[[:Category:Ritesh Jhaveri of Hillsboro OR (US)|Ritesh Jhaveri of Hillsboro OR (US)]][[Category:Ritesh Jhaveri of Hillsboro OR (US)]]

[[:Category:Moosung Kim of Portland OR (US)|Moosung Kim of Portland OR (US)]][[Category:Moosung Kim of Portland OR (US)]]

==ADVANCED ETCHING TECHNOLOGIES FOR STRAIGHT, TALL AND UNIFORM FINS ACROSS MULTIPLE FIN PITCH STRUCTURES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18531359 titled 'ADVANCED ETCHING TECHNOLOGIES FOR STRAIGHT, TALL AND UNIFORM FINS ACROSS MULTIPLE FIN PITCH STRUCTURES

==Simplified Explanation==

The semiconductor device described in the patent application comprises high aspect ratio fins, including nested fins and isolated fins. The method for forming such devices involves the use of a patterned hard mask with isolated and nested features, substrate etching processes, and specific etching chemistries.

* The semiconductor device includes one or more nested fins and one or more isolated fins.
* A patterned hard mask is formed with isolated and nested features using a hard mask etching process.
* Substrate etching processes transfer the pattern of the hard mask into the substrate to create isolated and nested fins.
* Specific etching chemistries, such as HBr, O, CF for the first etching process and Cl, Ar, CH for the second etching process, are utilized in the fabrication process.

== Potential Applications ==
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as high-performance integrated circuits and microprocessors.

== Problems Solved ==
This technology addresses the challenge of fabricating semiconductor devices with high aspect ratio fins, which are essential for achieving high performance and energy efficiency in modern electronic devices.

== Benefits ==
The use of high aspect ratio fins in semiconductor devices can lead to improved device performance, reduced power consumption, and enhanced overall functionality.

== Potential Commercial Applications ==
The technology could find commercial applications in the semiconductor industry for the production of next-generation electronic devices with increased performance and energy efficiency.

== Possible Prior Art ==
One possible prior art in this field is the use of similar etching processes and chemistries for creating high aspect ratio features in semiconductor devices. Research papers and patents related to advanced semiconductor fabrication techniques may also exist.

=== Unanswered Questions ===

=== How does the aspect ratio of the fins impact the performance of the semiconductor device? ===
The aspect ratio of the fins can affect the device's electrical characteristics, such as drive current and leakage current. Higher aspect ratios may lead to improved performance but could also introduce challenges in fabrication and reliability.

=== What are the limitations of using specific etching chemistries in the fabrication process? ===
While specific etching chemistries are optimized for creating high aspect ratio fins, they may have limitations in terms of selectivity, uniformity, and etch rate control. Understanding these limitations is crucial for ensuring the quality and reliability of the semiconductor devices.


==Original Abstract Submitted==

Embodiments of the invention describe semiconductor devices with high aspect ratio fins and methods for forming such devices. According to an embodiment, the semiconductor device comprises one or more nested fins and one or more isolated fins. According to an embodiment, a patterned hard mask comprising one or more isolated features and one or more nested features is formed with a hard mask etching process. A first substrate etching process forms isolated and nested fins in the substrate by transferring the pattern of the nested and isolated features of the hard mask into the substrate to a first depth. A second etching process is used to etch through the substrate to a second depth. According to embodiments of the invention, the first etching process utilizes an etching chemistry comprising HBr, Oand CF, and the second etching process utilizes an etching chemistry comprising Cl, Ar, and CH.



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