View source for 18529792. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Kabushiki Kaisha Toshiba|Kabushiki Kaisha Toshiba]]


[[Category:Kabushiki Kaisha Toshiba]]

==Inventor(s)==

[[:Category:Hiroshi Kono of Himeji Hyogo (JP)|Hiroshi Kono of Himeji Hyogo (JP)]][[Category:Hiroshi Kono of Himeji Hyogo (JP)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18529792 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract consists of multiple semiconductor layers, electrodes, and a metal film, all interconnected in a specific configuration.

* The device includes a first electrode, first semiconductor layer, second semiconductor layer, third semiconductor layer, fourth semiconductor layer, and fifth semiconductor layer.
* The third, fourth, and fifth semiconductor layers are connected to a third electrode, while the metal film is connected to the third electrode.
* The length of the fifth semiconductor layer in a second direction is greater than the length of the fourth semiconductor layer in the same direction.
* The second direction crosses a first direction, which is from the first electrode towards the first semiconductor layer.

Potential Applications:
- This semiconductor device could be used in electronic devices such as sensors, transistors, or memory storage units.
- It may find applications in the telecommunications industry for signal processing and amplification.

Problems Solved:
- This device provides a specific configuration of semiconductor layers that can enhance the performance and efficiency of electronic components.
- The unique design of the device allows for improved conductivity and signal processing capabilities.

Benefits:
- Improved performance and efficiency of electronic devices.
- Enhanced conductivity and signal processing capabilities.
- Potential for smaller and more compact electronic components.

Commercial Applications:
Title: Advanced Semiconductor Device for Enhanced Electronic Performance
This technology could be utilized in the development of high-performance electronic devices for various industries, including telecommunications, consumer electronics, and automotive.

Questions about the technology:
1. How does the configuration of multiple semiconductor layers in this device contribute to its overall performance?
2. What specific advantages does the length discrepancy between the fifth and fourth semiconductor layers provide in terms of functionality and efficiency?


==Original Abstract Submitted==

A semiconductor device includes a first electrode, a first semiconductor layer connected to the first electrode, a second semiconductor layer located on a portion of the first semiconductor layer, a third semiconductor layer located on a first portion of the second semiconductor layer, a fourth semiconductor layer located on a second portion of the second semiconductor layer, a fifth semiconductor layer located on a third portion of the second semiconductor layer, a second electrode, a third electrode connected to the third, fourth, and fifth semiconductor layers, and a metal film connected to the third electrode. A length in a second direction of the fifth semiconductor layer is greater than a length in the second direction of the fourth semiconductor layer. The second direction crosses a first direction. The first direction is from the first electrode toward the first semiconductor layer.



[[Category:H01L27/02]]
[[Category:H01L29/06]]
[[Category:H01L29/16]]
[[Category:H01L29/78]]
[[Category:CPC_H01L27/0255]]