View source for 18522771. HETEROJUNCTION SEMICONDUCTOR SUBSTRATE WITH EXCELLENT DIELECTRIC PROPERTIES, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE USING THE SAME simplified abstract (KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY)

=HETEROJUNCTION SEMICONDUCTOR SUBSTRATE WITH EXCELLENT DIELECTRIC PROPERTIES, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE USING THE SAME=


==Organization Name==

[[:Category:KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY|KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY]]


[[Category:KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY]]

==Inventor(s)==

[[:Category:Seung Hyub Baek of Seoul (KR)|Seung Hyub Baek of Seoul (KR)]][[Category:Seung Hyub Baek of Seoul (KR)]]

[[:Category:Soo Young Jung of Seoul (KR)|Soo Young Jung of Seoul (KR)]][[Category:Soo Young Jung of Seoul (KR)]]

[[:Category:Sunghoon Hur of Seoul (KR)|Sunghoon Hur of Seoul (KR)]][[Category:Sunghoon Hur of Seoul (KR)]]

[[:Category:Ji-Soo Jang of Seoul (KR)|Ji-Soo Jang of Seoul (KR)]][[Category:Ji-Soo Jang of Seoul (KR)]]

[[:Category:Jungho Yoon of Seoul (KR)|Jungho Yoon of Seoul (KR)]][[Category:Jungho Yoon of Seoul (KR)]]

[[:Category:Hyun-Cheol Song of Seoul (KR)|Hyun-Cheol Song of Seoul (KR)]][[Category:Hyun-Cheol Song of Seoul (KR)]]

[[:Category:Seong Keun Kim of Seoul (KR)|Seong Keun Kim of Seoul (KR)]][[Category:Seong Keun Kim of Seoul (KR)]]

[[:Category:Chong Yun Kang of Seoul (KR)|Chong Yun Kang of Seoul (KR)]][[Category:Chong Yun Kang of Seoul (KR)]]

[[:Category:Ji-Won Choi of Seoul (KR)|Ji-Won Choi of Seoul (KR)]][[Category:Ji-Won Choi of Seoul (KR)]]

[[:Category:Jin Sang Kim of Wanju-gun (KR)|Jin Sang Kim of Wanju-gun (KR)]][[Category:Jin Sang Kim of Wanju-gun (KR)]]

==HETEROJUNCTION SEMICONDUCTOR SUBSTRATE WITH EXCELLENT DIELECTRIC PROPERTIES, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE USING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18522771 titled 'HETEROJUNCTION SEMICONDUCTOR SUBSTRATE WITH EXCELLENT DIELECTRIC PROPERTIES, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE USING THE SAME

==Simplified Explanation==

The present invention relates to a heterojunction semiconductor substrate with excellent dielectric properties, a method of manufacturing the same, and an electronic device using the same. The substrate includes a metal layer and a conductive metal oxide layer interposed on a semiconductor substrate to form an epitaxial oxide thin film layer composed of perovskite piezoelectric oxide.

* Improved interlayer adhesion
* Low leakage current
* Excellent dielectric properties
* Strength maintained in a ferroelectric fatigue experiment
* High functionality of the epitaxial oxide thin film layer

== Potential Applications ==
The technology can be applied to sensors, actuators, transducers, or MEMS devices that utilize the high functionality of the high-quality epitaxial oxide thin film layer.

== Problems Solved ==
1. Poor interlayer adhesion in semiconductor substrates
2. High leakage current in electronic devices

== Benefits ==
1. Improved dielectric properties
2. Enhanced strength in ferroelectric fatigue experiments
3. High functionality for various applications

== Potential Commercial Applications ==
The technology can be utilized in electronic and optical devices for improved performance and reliability.

== Possible Prior Art ==
One possible prior art could be the use of traditional semiconductor substrates without the metal and conductive metal oxide layers for enhancing dielectric properties.

=== Unanswered Questions ===

=== How does the metal layer improve the interlayer adhesion in the semiconductor substrate? ===
The metal layer acts as a bonding agent between the semiconductor substrate and the conductive metal oxide layer, enhancing the overall adhesion of the layers.

=== What specific applications in sensors can benefit from the high functionality of the epitaxial oxide thin film layer? ===
Sensors that require precise and reliable dielectric properties, such as pressure sensors or temperature sensors, can benefit from the high functionality of the epitaxial oxide thin film layer.


==Original Abstract Submitted==

The present invention relates to a heterojunction semiconductor substrate having excellent dielectric properties, a method of manufacturing the same, and an electronic device using the same. The present invention provides a heterojunction semiconductor substrate with improved interlayer adhesion, low leakage current, and excellent dielectric properties that maintain strength in a ferroelectric fatigue experiment by interposing a metal layer and a conductive metal oxide layer on a semiconductor substrate to form an epitaxial oxide thin film layer composed of perovskite piezoelectric oxide. The heterojunction semiconductor substrate can be applied to sensors, actuators, transducers, or MEMS devices that use the high functionality of the high-quality epitaxial oxide thin film layer, including applications in electronic and optical devices.



[[Category:H10N30/00]]
[[Category:C30B23/04]]
[[Category:C30B29/22]]
[[Category:H10N30/072]]
[[Category:H10N30/082]]
[[Category:H10N30/853]]