View source for 18522637. Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry simplified abstract (Micron Technology, Inc.)

=Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Hung-Wei Liu of Meridian ID (US)|Hung-Wei Liu of Meridian ID (US)]][[Category:Hung-Wei Liu of Meridian ID (US)]]

[[:Category:Vassil N. Antonov of Boise ID (US)|Vassil N. Antonov of Boise ID (US)]][[Category:Vassil N. Antonov of Boise ID (US)]]

[[:Category:Ashonita A. Chavan of Boise ID (US)|Ashonita A. Chavan of Boise ID (US)]][[Category:Ashonita A. Chavan of Boise ID (US)]]

[[:Category:Darwin Franseda Fan of Boise ID (US)|Darwin Franseda Fan of Boise ID (US)]][[Category:Darwin Franseda Fan of Boise ID (US)]]

[[:Category:Jeffery B. Hull of Boise ID (US)|Jeffery B. Hull of Boise ID (US)]][[Category:Jeffery B. Hull of Boise ID (US)]]

[[:Category:Anish A. Khandekar of Boise ID (US)|Anish A. Khandekar of Boise ID (US)]][[Category:Anish A. Khandekar of Boise ID (US)]]

[[:Category:Masihhur R. Laskar of Boise ID (US)|Masihhur R. Laskar of Boise ID (US)]][[Category:Masihhur R. Laskar of Boise ID (US)]]

[[:Category:Albert Liao of Boise ID (US)|Albert Liao of Boise ID (US)]][[Category:Albert Liao of Boise ID (US)]]

[[:Category:Xue-Feng Lin of Boise ID (US)|Xue-Feng Lin of Boise ID (US)]][[Category:Xue-Feng Lin of Boise ID (US)]]

[[:Category:Manuj Nahar of Boise ID (US)|Manuj Nahar of Boise ID (US)]][[Category:Manuj Nahar of Boise ID (US)]]

[[:Category:Irina V. Vasilyeva of Boise ID (US)|Irina V. Vasilyeva of Boise ID (US)]][[Category:Irina V. Vasilyeva of Boise ID (US)]]

==Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18522637 titled 'Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry

==Simplified Explanation==

The abstract describes a method of forming a vertical transistor with specific microwave annealing steps to reduce the concentration of elemental-form H in the channel region.

* The method involves multiple time-spaced microwave annealing steps.
* The annealing steps reduce the average concentration of elemental-form H in the channel region.
* The reduced concentration of elemental-form H is between 0.005 to less than 1 atomic percent.

== Potential Applications ==
This technology could be applied in the semiconductor industry for the production of vertical transistors with improved performance and reliability.

== Problems Solved ==
This method addresses the issue of high concentration of elemental-form H in the channel region of vertical transistors, which can negatively impact device performance.

== Benefits ==
* Improved transistor performance.
* Enhanced reliability.
* Better control over elemental-form H concentration.

== Potential Commercial Applications ==
Vertical transistors manufactured using this method could be used in various electronic devices such as smartphones, computers, and other consumer electronics.

== Possible Prior Art ==
There may be prior art related to methods of reducing impurities in semiconductor devices using annealing processes, but specific examples would need to be researched.

=== Unanswered Questions ===

=== How does this method compare to traditional annealing processes in terms of efficiency and cost-effectiveness? ===
This article does not provide a direct comparison between this method and traditional annealing processes in terms of efficiency and cost-effectiveness. Further research or experimentation would be needed to determine the advantages of this specific method.

=== What are the long-term effects of the reduced concentration of elemental-form H on the overall performance and lifespan of the vertical transistor? ===
The article does not address the long-term effects of the reduced concentration of elemental-form H on the performance and lifespan of the vertical transistor. Additional studies or testing would be required to assess the long-term implications of this method.


==Original Abstract Submitted==

A method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.



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