View source for 18522056. SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION simplified abstract (Intel Corporation)

=SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Patricio E. Romero of Portland OR (US)|Patricio E. Romero of Portland OR (US)]][[Category:Patricio E. Romero of Portland OR (US)]]

==SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18522056 titled 'SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION

==Simplified Explanation==

The patent application describes precursor compounds and methods for atomic layer deposition of films containing scandium(III) oxide or scandium(III) sulfide, which can be used as dielectric layers in semiconductor manufacturing processes.

* Scandium(III) oxide and scandium(III) sulfide films can be deposited using atomic layer deposition techniques.
* These films can serve as dielectric layers in semiconductor manufacturing processes.
* The innovation enables the deposition of high-quality dielectric films for use in various electronic devices.

== Potential Applications ==
The technology can be applied in the manufacturing of semiconductors, electronic devices, and integrated circuits.

== Problems Solved ==
The technology solves the problem of producing high-quality dielectric films containing scandium(III) oxide or scandium(III) sulfide for use in semiconductor devices.

== Benefits ==
The benefits of this technology include improved performance and reliability of electronic devices, enhanced semiconductor manufacturing processes, and the production of advanced integrated circuits.

== Potential Commercial Applications ==
The technology can be commercially applied in the semiconductor industry for the production of electronic devices, integrated circuits, and other semiconductor components.

== Possible Prior Art ==
Prior art in the field of atomic layer deposition techniques for dielectric film deposition may exist, but specific examples are not provided in this patent application.

=== Unanswered Questions ===

== What is the cost-effectiveness of implementing this technology in semiconductor manufacturing processes? ==
The cost-effectiveness of using this technology compared to traditional methods is not addressed in the patent application.

== How does the performance of films containing scandium(III) oxide or scandium(III) sulfide compare to other dielectric materials in electronic devices? ==
The comparative performance analysis of these films with other dielectric materials is not discussed in the patent application.


==Original Abstract Submitted==

Described are precursor compounds and methods for atomic layer deposition of films containing scandium(III) oxide or scandium(III) sulfide. Such films may be utilized as dielectric layers in semiconductor manufacturing processes, particular for depositing dielectric films and the use of such films in various electronic devices.



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