View source for 18521560. SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Yi Yang of Fremont CA (US)|Yi Yang of Fremont CA (US)]][[Category:Yi Yang of Fremont CA (US)]]

[[:Category:Dongna Shen of San Jose CA (US)|Dongna Shen of San Jose CA (US)]][[Category:Dongna Shen of San Jose CA (US)]]

[[:Category:Yu-Jen Wang of San Jose CA (US)|Yu-Jen Wang of San Jose CA (US)]][[Category:Yu-Jen Wang of San Jose CA (US)]]

==SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18521560 titled 'SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE

==Simplified Explanation==

The patent application describes a method for fabricating a T-shaped bottom electrode structure for Magnetic Tunnel Junction (MTJ) devices.

* A first conductive layer is patterned and trimmed to form a sub 30 nm conductive via on a bottom electrode.
* The conductive via is encapsulated with a dielectric layer and planarized.
* A second conductive layer is deposited and patterned to form a sub 60 nm second conductive layer, creating a T-shaped bottom electrode.
* MTJ stacks are deposited on the T-shaped bottom electrode and on the first bottom electrode.
* A top electrode contacts the MTJ stack on the T-shaped bottom electrode plug.

== Potential Applications ==
This technology can be applied in the development of advanced memory devices, such as magnetic random-access memory (MRAM) and non-volatile magnetic memory.

== Problems Solved ==
This innovation addresses the challenge of fabricating small-scale MTJ devices with improved performance and reliability.

== Benefits ==
The T-shaped bottom electrode structure allows for better control of the MTJ device properties, leading to enhanced memory device performance.

== Potential Commercial Applications ==
The technology can be utilized in the production of high-density, low-power memory devices for various electronic applications.

== Possible Prior Art ==
Prior art may include methods for fabricating MTJ devices with different bottom electrode structures, such as single-layer or multi-layer configurations.

=== Unanswered Questions ===

=== How does this technology compare to existing MTJ device fabrication methods? ===
This article does not provide a direct comparison with other fabrication methods for MTJ devices. 

=== What are the specific performance improvements achieved with the T-shaped bottom electrode structure? ===
The article does not detail the specific performance enhancements resulting from the T-shaped bottom electrode design.


==Original Abstract Submitted==

A first conductive layer is patterned and trimmed to form a sub 30 nm conductive via on a first bottom electrode. The conductive via is encapsulated with a first dielectric layer and planarized to expose a top surface of the conductive via. A second conductive layer is deposited over the first dielectric layer and the conductive via. The second conductive layer is patterned to form a sub 60 nm second conductive layer wherein the conductive via and second conductive layer together form a T-shaped second bottom electrode. MTJ stacks are deposited on the T-shaped second bottom electrode and on the first bottom electrode wherein the MTJ stacks are discontinuous. A second dielectric layer is deposited over the MTJ stacks and planarized to expose a top surface of the MTJ stack on the T-shaped second bottom electrode. A top electrode contacts the MTJ stack on the T-shaped second bottom electrode plug.



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