View source for 18520908. Silicon Controlled Rectifier simplified abstract (Infineon Technologies AG)

=Silicon Controlled Rectifier=


==Organization Name==

[[:Category:Infineon Technologies AG|Infineon Technologies AG]]


[[Category:Infineon Technologies AG]]

==Inventor(s)==

[[:Category:Christian Cornelius Russ of Diedorf (DE)|Christian Cornelius Russ of Diedorf (DE)]][[Category:Christian Cornelius Russ of Diedorf (DE)]]

[[:Category:Gabriel-Dumitru Cretu of Muenchen (DE)|Gabriel-Dumitru Cretu of Muenchen (DE)]][[Category:Gabriel-Dumitru Cretu of Muenchen (DE)]]

[[:Category:Filippo Magrini of Muenchen (DE)|Filippo Magrini of Muenchen (DE)]][[Category:Filippo Magrini of Muenchen (DE)]]

==Silicon Controlled Rectifier - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18520908 titled 'Silicon Controlled Rectifier

==Simplified Explanation==

The abstract describes a patent application for a silicon-controlled rectifier (SCR) with specific surface contact areas and SCR regions.

* The semiconductor body of the SCR has a first main surface with surface contact areas arranged in a specific order along a lateral direction.
* The SCR includes four SCR regions, with the first and third regions being of a first conductivity type and the second and fourth regions being of a second conductivity type.
* The first and third SCR regions are electrically connected to the first and third surface contact areas, while the second and fourth SCR regions are connected to the second and fourth surface contact areas.
* The first SCR region is connected to the fourth SCR region, and the second SCR region is connected to the third SCR region.

== Potential Applications ==
The technology described in this patent application could be used in power electronics, motor control systems, and other applications that require efficient and reliable switching devices.

== Problems Solved ==
This technology solves the problem of improving the performance and reliability of silicon-controlled rectifiers by optimizing the layout and connectivity of the SCR regions and surface contact areas.

== Benefits ==
The benefits of this technology include enhanced efficiency, improved reliability, and better control of power flow in electronic systems.

== Potential Commercial Applications ==
The technology could be applied in industries such as automotive, renewable energy, industrial automation, and consumer electronics for various power control and conversion applications.

== Possible Prior Art ==
One possible prior art for this technology could be the traditional design of silicon-controlled rectifiers with less optimized layouts and connectivity of SCR regions and surface contact areas.

=== Unanswered Questions ===

=== How does this technology compare to existing SCR designs in terms of performance and reliability? ===
This article does not provide a direct comparison between this technology and existing SCR designs in terms of performance and reliability. Further testing and analysis would be needed to determine the specific advantages of this innovation.

=== What are the potential challenges in implementing this technology in practical electronic systems? ===
The article does not address the potential challenges in implementing this technology in practical electronic systems, such as manufacturing complexity, cost implications, or compatibility with existing systems. Further research and development may be required to address these challenges.


==Original Abstract Submitted==

A silicon-controlled rectifier includes a semiconductor body including a first main surface, an active device region, a first, a second, a third and a fourth surface contact area at the first main surface and arranged directly one after another along a first lateral direction, wherein the semiconductor body is electrically contacted at each of the first to fourth surface contact areas, and a first, a second, a third and a fourth SCR region, wherein the first and third SCR regions are of a first conductivity type and directly adjoin the first and third surface contact areas, respectively, and wherein the second and fourth SCR regions are of a second conductivity type and directly adjoin the second and fourth surface contact areas, respectively, wherein the first SCR region is electrically connected to the fourth SCR region, and the second SCR region is electrically connected to the third SCR region.



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[[Category:H01L29/74]]