View source for 18520346. REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Chia-Ta Yu of New Taipei City (TW)|Chia-Ta Yu of New Taipei City (TW)]][[Category:Chia-Ta Yu of New Taipei City (TW)]]

[[:Category:Hsiao-Chiu Hsu of Hsinchu City (TW)|Hsiao-Chiu Hsu of Hsinchu City (TW)]][[Category:Hsiao-Chiu Hsu of Hsinchu City (TW)]]

[[:Category:Feng-Cheng Yang of Hsinchu County (TW)|Feng-Cheng Yang of Hsinchu County (TW)]][[Category:Feng-Cheng Yang of Hsinchu County (TW)]]

==REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18520346 titled 'REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES

==Simplified Explanation==

The semiconductor structure described in the patent application includes semiconductor layers, a metal gate stack, source/drain features, and an isolation structure. Here are some key points to explain the innovation:

* The semiconductor layers are oriented lengthwise in a first direction on top of a substrate.
* The metal gate stack is oriented lengthwise in a second direction perpendicular to the first direction and includes a top portion and a bottom portion interleaved with the semiconductor layers.
* Source/drain features are located in the semiconductor layers next to the metal gate stack.
* An isolation structure protrudes from the substrate, oriented lengthwise along the second direction and spaced from the metal gate stack along the first direction, consisting of a dielectric layer and an air gap.

== Potential Applications ==
This semiconductor structure could be used in advanced integrated circuits, microprocessors, and other electronic devices that require precise control of electrical signals.

== Problems Solved ==
This technology helps improve the performance and efficiency of semiconductor devices by reducing interference and enhancing signal integrity.

== Benefits ==
The innovative structure allows for better isolation between components, leading to higher reliability and lower power consumption in electronic devices.

== Potential Commercial Applications ==
The technology could be applied in the development of next-generation smartphones, tablets, computers, and other consumer electronics, as well as in industrial applications such as automotive electronics and IoT devices.

== Possible Prior Art ==
One possible prior art could be the use of similar isolation structures in semiconductor devices, but the specific configuration described in this patent application may be novel and inventive.

=== Unanswered Questions ===

=== How does this semiconductor structure compare to existing technologies in terms of performance and cost? ===
The article does not provide a direct comparison with existing technologies, so it is unclear how this innovation stacks up in terms of performance and cost.

=== What are the potential challenges or limitations in implementing this technology on a large scale? ===
The article does not address any potential challenges or limitations that may arise when implementing this technology on a large scale, leaving room for further exploration in this area.


==Original Abstract Submitted==

A semiconductor structure includes semiconductor layers disposed over a substrate and oriented lengthwise in a first direction, a metal gate stack disposed over the semiconductor layers and oriented lengthwise in a second direction perpendicular to the first direction, where the metal gate stack includes a top portion and a bottom portion that is interleaved with the semiconductor layers, source/drain features disposed in the semiconductor layers and adjacent to the metal gate stack, and an isolation structure protruding from the substrate, where the isolation structure is oriented lengthwise along the second direction and spaced from the metal gate stack along the first direction, and where the isolation structure includes a dielectric layer and an air gap.



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