View source for 18520273. SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS simplified abstract (SONY GROUP CORPORATION)

=SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS=


==Organization Name==

[[:Category:SONY GROUP CORPORATION|SONY GROUP CORPORATION]]


[[Category:SONY GROUP CORPORATION]]

==Inventor(s)==

[[:Category:Taku Umebayashi of Kanagawa (JP)|Taku Umebayashi of Kanagawa (JP)]][[Category:Taku Umebayashi of Kanagawa (JP)]]

[[:Category:Keiji Tatani of Kanagawa (JP)|Keiji Tatani of Kanagawa (JP)]][[Category:Keiji Tatani of Kanagawa (JP)]]

[[:Category:Hajime Inoue of Kanagawa (JP)|Hajime Inoue of Kanagawa (JP)]][[Category:Hajime Inoue of Kanagawa (JP)]]

[[:Category:Ryuichi Kanamura of Kumamoto (JP)|Ryuichi Kanamura of Kumamoto (JP)]][[Category:Ryuichi Kanamura of Kumamoto (JP)]]

==SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18520273 titled 'SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS

==Simplified Explanation==

The semiconductor device described in the abstract includes multiple semiconductor sections stacked together, each with its own wiring layer. A first conductive material electrically connects at least two of the wiring layers, ensuring they are in electrical communication.

* The semiconductor device consists of stacked semiconductor sections with wiring layers.
* A first conductive material connects at least two wiring layers to establish electrical communication.

== Potential Applications ==
The technology described in this patent application could have potential applications in:
* Semiconductor manufacturing
* Photodiode integration
* Electrical communication in stacked semiconductor devices

== Problems Solved ==
This technology addresses the following problems:
* Ensuring electrical communication between stacked semiconductor sections
* Simplifying the integration of multiple semiconductor sections

== Benefits ==
The benefits of this technology include:
* Improved efficiency in semiconductor device design
* Enhanced electrical connectivity in stacked semiconductor sections
* Streamlined manufacturing processes

== Potential Commercial Applications ==
* "Stacked Semiconductor Device with Integrated Wiring Layers" could be used in:
* Consumer electronics
* Telecommunications equipment
* Automotive electronics

== Possible Prior Art ==
One possible prior art for this technology could be the integration of wiring layers in stacked semiconductor devices in a similar manner. Further research is needed to identify specific examples of prior art in this field.

== Unanswered Questions ==
=== How does this technology compare to existing methods of connecting wiring layers in stacked semiconductor devices? ===
This article does not provide a direct comparison to existing methods, leaving room for further investigation into the advantages and disadvantages of this new approach.

=== What specific materials are used for the wiring layers and conductive material in this semiconductor device? ===
The article does not detail the specific materials used, which could impact the performance and reliability of the device. Further research is needed to determine the materials involved in this technology.


==Original Abstract Submitted==

A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.



[[Category:H01L27/146]]