View source for 18519516. SEMICONDUCTOR STRUCTURE AND METHOD MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=SEMICONDUCTOR STRUCTURE AND METHOD MAKING THE SAME=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Hsin-Yen Huang of Yonghe City (TW)|Hsin-Yen Huang of Yonghe City (TW)]][[Category:Hsin-Yen Huang of Yonghe City (TW)]]

[[:Category:Kai-Fang Cheng of Taoyuan City (TW)|Kai-Fang Cheng of Taoyuan City (TW)]][[Category:Kai-Fang Cheng of Taoyuan City (TW)]]

[[:Category:Chi-Lin Teng of Taichung City (TW)|Chi-Lin Teng of Taichung City (TW)]][[Category:Chi-Lin Teng of Taichung City (TW)]]

[[:Category:Hai-Ching Chen of Hsin-Chu City (TW)|Hai-Ching Chen of Hsin-Chu City (TW)]][[Category:Hai-Ching Chen of Hsin-Chu City (TW)]]

[[:Category:Tien-I Bao of Taoyuan County (TW)|Tien-I Bao of Taoyuan County (TW)]][[Category:Tien-I Bao of Taoyuan County (TW)]]

==SEMICONDUCTOR STRUCTURE AND METHOD MAKING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18519516 titled 'SEMICONDUCTOR STRUCTURE AND METHOD MAKING THE SAME

==Simplified Explanation==

The method described in the patent application involves forming an integrated circuit structure by providing a substrate with a conductive feature, then layering aluminum-containing dielectric and low-k dielectric layers on top of it, and finally etching the low-k dielectric layer to create a contact trench aligned with the conductive feature.

* Substrate with conductive feature provided
* Aluminum-containing dielectric layer formed on the conductive feature
* Low-k dielectric layer formed on the Al-containing dielectric layer
* Etching of the low-k dielectric layer to create a contact trench aligned with the conductive feature
* Bottom of the contact trench on the surface of the Al-containing dielectric layer

== Potential Applications ==
* Semiconductor manufacturing
* Integrated circuit fabrication
* Electronics industry

== Problems Solved ==
* Improved integration of different dielectric materials
* Enhanced contact formation process
* Increased efficiency in circuit structure formation

== Benefits ==
* Better performance of integrated circuits
* Enhanced reliability of contact structures
* Improved overall functionality of electronic devices


==Original Abstract Submitted==

The present disclosure provides a method for forming an integrated circuit (IC) structure. The method comprises providing a substrate including a conductive feature; forming aluminum (Al)-containing dielectric layer on the conductive feature; forming a low-k dielectric layer on the Al-containing dielectric layer; and etching the low-k dielectric layer to form a contact trench aligned with the conductive feature. A bottom of the contact trench is on a surface of the Al-containing dielectric layer.



[[Category:H01L23/522]]
[[Category:H01L21/02]]
[[Category:H01L21/311]]
[[Category:H01L21/768]]
[[Category:H01L23/532]]