View source for 18519501. WAFER DICING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=WAFER DICING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Jesung Kim of Suwon-si (KR)|Jesung Kim of Suwon-si (KR)]][[Category:Jesung Kim of Suwon-si (KR)]]

[[:Category:Haemin Park of Suwon-si (KR)|Haemin Park of Suwon-si (KR)]][[Category:Haemin Park of Suwon-si (KR)]]

[[:Category:Heejae Nam of Suwon-si (KR)|Heejae Nam of Suwon-si (KR)]][[Category:Heejae Nam of Suwon-si (KR)]]

[[:Category:Junggeun Shin of Suwon-si (KR)|Junggeun Shin of Suwon-si (KR)]][[Category:Junggeun Shin of Suwon-si (KR)]]

[[:Category:Junho Yoon of Suwon-si (KR)|Junho Yoon of Suwon-si (KR)]][[Category:Junho Yoon of Suwon-si (KR)]]

[[:Category:Jungho Choi of Suwon-si (KR)|Jungho Choi of Suwon-si (KR)]][[Category:Jungho Choi of Suwon-si (KR)]]

==WAFER DICING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18519501 titled 'WAFER DICING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME

==Simplified Explanation==

The wafer dicing method described in the patent application involves preparing a wafer with multiple device formation areas and a scribe lane area, forming semiconductor devices in the device formation areas, creating first grooves in the scribe lane area, forming second grooves by planarizing the lower surfaces of the first grooves, generating internal cracks in the wafer using a laser beam along the lower surfaces of the second grooves, and separating the semiconductor devices along the internal cracks.

* Wafer dicing method:
    - Prepare wafer with device formation areas and scribe lane area
    - Form semiconductor devices in device formation areas
    - Create first grooves in scribe lane area
    - Form second grooves by planarizing lower surfaces of first grooves
    - Generate internal cracks in wafer using laser beam
    - Separate semiconductor devices along internal cracks

== Potential Applications ==
This technology can be applied in semiconductor manufacturing processes, specifically in the dicing and separation of semiconductor devices on wafers.

== Problems Solved ==
1. Efficient and precise dicing of semiconductor devices on wafers.
2. Minimization of damage to the devices during separation.

== Benefits ==
1. Improved yield and quality of semiconductor devices.
2. Enhanced productivity in semiconductor manufacturing processes.

== Potential Commercial Applications ==
Optimizing Wafer Dicing Method for Semiconductor Device Manufacturing

== Possible Prior Art ==
Prior art may include traditional wafer dicing methods using mechanical saws or other cutting tools.

== Unanswered Questions ==

=== How does this method compare to traditional wafer dicing techniques in terms of efficiency and accuracy? ===
The article does not provide a direct comparison between this method and traditional wafer dicing techniques. Further research or testing may be needed to evaluate the performance differences.

=== What are the potential limitations or challenges of implementing this technology in large-scale semiconductor manufacturing facilities? ===
The article does not address the potential limitations or challenges of implementing this technology on an industrial scale. Factors such as cost, scalability, and integration with existing processes could be important considerations.


==Original Abstract Submitted==

A wafer dicing method includes preparing a wafer having a plurality of device formation areas and a scribe lane area defining the plurality of device formation areas, forming a plurality of semiconductor devices in the plurality of device formation areas of the wafer, forming, in the scribe lane area, a plurality of first grooves partially passing through at least a portion of the wafer in a vertical direction, forming a plurality of second grooves by planarizing lower surfaces of the plurality of first grooves, forming one or more internal cracks in the wafer by radiating a laser beam along lower surfaces of the plurality of second grooves, and separating the plurality of semiconductor devices from each other along the one or more internal cracks.



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