View source for 18518578. MEMORY DEVICE, MEMORY CELL READ CIRCUIT, AND CONTROL METHOD FOR MISMATCH COMPENSATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=MEMORY DEVICE, MEMORY CELL READ CIRCUIT, AND CONTROL METHOD FOR MISMATCH COMPENSATION=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Ku-Feng Lin of New Taipei City (TW)|Ku-Feng Lin of New Taipei City (TW)]][[Category:Ku-Feng Lin of New Taipei City (TW)]]

==MEMORY DEVICE, MEMORY CELL READ CIRCUIT, AND CONTROL METHOD FOR MISMATCH COMPENSATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18518578 titled 'MEMORY DEVICE, MEMORY CELL READ CIRCUIT, AND CONTROL METHOD FOR MISMATCH COMPENSATION

==Simplified Explanation==

The memory device described in the patent application includes a sense amplifier with two branches that output voltages to two memory cells during a trimming operation. The sense amplifier has a first clamp device with a clamp transistor and multiple trimming transistors that adjust voltages to compensate for any mismatch between the two output voltages.

* The memory device has a sense amplifier with two branches for outputting voltages to memory cells.
* A first clamp device in the sense amplifier includes a clamp transistor and multiple trimming transistors.
* The gate terminals of the clamp transistor and trimming transistors are biased by a fixed clamp voltage.
* The trimming transistors are selectively conducted to compensate for any mismatch between the output voltages.

== Potential Applications ==
* Semiconductor memory devices
* Integrated circuits
* Data storage systems

== Problems Solved ==
* Mismatch between output voltages in memory devices
* Improving accuracy and reliability of memory operations

== Benefits ==
* Enhanced performance of memory devices
* Increased accuracy in voltage output
* Improved reliability in memory operations


==Original Abstract Submitted==

A memory device that includes a first memory cell, a second memory cell and a sense amplifier. The sense amplifier includes a first branch and a second branch and are configured to output a first voltage and a second voltage to the first memory and the second memory, respectively in a trimming operation. A first clamp device of the sense amplifier includes a first clamp transistor and a plurality of first trimming transistors that are coupled to the first clamp transistor in parallel. The gate terminals of the first clamp transistor and the plurality of first trimming transistors are biased by a fixed clamp voltage. Each of the plurality of first trimming transistors is selectively conducted to compensate a mismatch between the first voltage and the second voltage.



[[Category:G11C7/06]]