View source for 18518496. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM  INCLUDING SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Jiwon Kim of Suwon-si (KR)|Jiwon Kim of Suwon-si (KR)]][[Category:Jiwon Kim of Suwon-si (KR)]]

[[:Category:Jiyoung Kim of Suwon-si (KR)|Jiyoung Kim of Suwon-si (KR)]][[Category:Jiyoung Kim of Suwon-si (KR)]]

[[:Category:Woosung Yang of Suwon-si (KR)|Woosung Yang of Suwon-si (KR)]][[Category:Woosung Yang of Suwon-si (KR)]]

[[:Category:Dohyung Kim of Suwon-si (KR)|Dohyung Kim of Suwon-si (KR)]][[Category:Dohyung Kim of Suwon-si (KR)]]

[[:Category:Sukkang Sung of Suwon-si (KR)|Sukkang Sung of Suwon-si (KR)]][[Category:Sukkang Sung of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM  INCLUDING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18518496 titled 'SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM  INCLUDING SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract consists of a first substrate structure with decoder circuit regions and a page buffer circuit region, connected to a second substrate structure. The second substrate structure contains two cell structures with horizontally extending gate electrodes, one below the other, along with stair structures and contact plugs.

* The semiconductor device features a unique layout with two cell structures stacked vertically, each with its own set of gate electrodes.
* Stair structures are placed on either side of the cell structures, with contact plugs passing through them to connect to the gate electrodes.
* The innovative design allows for efficient communication and control within the semiconductor device.

Potential Applications:
The technology can be applied in memory devices, processors, and other semiconductor-based systems requiring efficient data storage and processing capabilities.

Problems Solved:
The design addresses the need for compact and organized semiconductor structures that enhance performance and functionality.

Benefits:
Improved data processing speed, enhanced memory storage capacity, and overall efficiency in semiconductor devices.

Commercial Applications:
Title: "Advanced Semiconductor Device for Enhanced Data Processing"
The technology can be utilized in the development of high-performance computers, mobile devices, and IoT applications, catering to a wide range of industries.

Prior Art:
Researchers can explore prior patents related to semiconductor device layouts, vertical stacking of cell structures, and gate electrode configurations.

Frequently Updated Research:
Stay updated on advancements in semiconductor manufacturing techniques, gate electrode materials, and vertical integration technologies to enhance the performance of semiconductor devices.

Questions about the Technology:
1. How does the vertical stacking of cell structures impact the overall efficiency of the semiconductor device?
2. What are the potential challenges in implementing this innovative design in large-scale semiconductor production processes?


==Original Abstract Submitted==

A semiconductor device includes a first substrate structure including a first decoder circuit region, a second decoder circuit region, and a page buffer circuit region, and a second substrate structure connected to the first substrate structure. The second substrate structure includes a first cell structure that includes first horizontally extending gate electrodes, and a second cell structure that includes second horizontally extending gate electrodes. The second cell structure is disposed below the first cell structure. A first stair structure is disposed to one side of the first and second cell structures, and a second stair structure is disposed to a second side opposite the first side. a dummy structure is disposed below the first stair structure. First contact plugs pass through the first stair structure and the first dummy structure and are respectively connected to the first gate electrodes, and second contact plugs pass through the second stair structure and are respectively connected to the second gate electrodes.



[[Category:G11C16/08]]
[[Category:H01L23/522]]
[[Category:H01L23/528]]
[[Category:H01L25/065]]
[[Category:H10B41/27]]
[[Category:H10B41/35]]
[[Category:H10B43/27]]
[[Category:H10B43/35]]
[[Category:H10B80/00]]
[[Category:CPC_G11C16/08]]