View source for 18518081. Metal Contact Structure and Method of Forming the Same in a Semiconductor Device simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=Metal Contact Structure and Method of Forming the Same in a Semiconductor Device=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Yu-Hung Lin of Taichung (TW)|Yu-Hung Lin of Taichung (TW)]][[Category:Yu-Hung Lin of Taichung (TW)]]

[[:Category:Sheng-Hsuan Lin of Zhubei (TW)|Sheng-Hsuan Lin of Zhubei (TW)]][[Category:Sheng-Hsuan Lin of Zhubei (TW)]]

[[:Category:Chih-Wei Chang of Hsinchu (TW)|Chih-Wei Chang of Hsinchu (TW)]][[Category:Chih-Wei Chang of Hsinchu (TW)]]

[[:Category:You-Hua Chou of Hsinchu (TW)|You-Hua Chou of Hsinchu (TW)]][[Category:You-Hua Chou of Hsinchu (TW)]]

==Metal Contact Structure and Method of Forming the Same in a Semiconductor Device - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18518081 titled 'Metal Contact Structure and Method of Forming the Same in a Semiconductor Device

==Simplified Explanation==

The semiconductor device described in the patent application comprises a silicide layer, a metal plug, a dielectric layer, a first metal layer, a second metal layer, and an amorphous layer.

* The semiconductor device includes a silicide layer on a substrate.
* A metal plug is located in an opening defined by a dielectric layer over the substrate.
* A first metal layer is present between the metal plug and the dielectric layer, as well as between the metal plug and the silicide layer.
* A second metal layer is positioned over the first metal layer.
* An amorphous layer is situated between the first metal layer and the second metal layer.

== Potential Applications ==
* This technology can be used in the manufacturing of advanced semiconductor devices.
* It can improve the performance and reliability of integrated circuits.

== Problems Solved ==
* Enhances the electrical conductivity and stability of the semiconductor device.
* Provides better integration of different metal layers in the device structure.

== Benefits ==
* Increased efficiency and functionality of semiconductor devices.
* Improved overall performance and durability of integrated circuits.


==Original Abstract Submitted==

A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.



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