View source for 18515906. MEMORY CELLS AND MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION simplified abstract (Micron Technology, Inc.)

=MEMORY CELLS AND MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Dmitry Mikulik of Meridian ID (US)|Dmitry Mikulik of Meridian ID (US)]][[Category:Dmitry Mikulik of Meridian ID (US)]]

[[:Category:Leo Lukose of Leuven (BE)|Leo Lukose of Leuven (BE)]][[Category:Leo Lukose of Leuven (BE)]]

[[:Category:Ramanathan Gandhi of Singapore (SG)|Ramanathan Gandhi of Singapore (SG)]][[Category:Ramanathan Gandhi of Singapore (SG)]]

==MEMORY CELLS AND MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18515906 titled 'MEMORY CELLS AND MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION

==Simplified Explanation==
The patent application describes memory cells and memory array structures with specific dielectric materials to improve performance.

* Control gate, channel, gate dielectric, charge-storage node, charge-blocking material, laminated dielectric, and high-K dielectric are key components.
* The laminated dielectric includes a first dielectric material with higher oxygen areal density than a second dielectric material.
* This design aims to enhance memory cell efficiency and reliability.

==Key Features and Innovation==
* Memory cells with a unique dielectric structure for improved performance.
* Specific arrangement of dielectric materials to optimize charge storage and blocking.
* Focus on enhancing memory array structures for better overall functionality.

==Potential Applications==
* Semiconductor industry for memory devices.
* Consumer electronics for faster and more reliable data storage.
* Embedded systems for improved performance in various applications.

==Problems Solved==
* Addressing challenges in memory cell efficiency and reliability.
* Optimizing charge storage and blocking for enhanced memory performance.
* Improving overall functionality of memory array structures.

==Benefits==
* Increased memory cell efficiency and reliability.
* Enhanced performance of memory array structures.
* Potential for faster data storage and improved functionality in various applications.

==Commercial Applications==
'''Memory Technology Advancements: Enhancing Data Storage Efficiency'''
This technology can revolutionize the semiconductor industry by improving memory cell performance and reliability. It has the potential to be integrated into consumer electronics and embedded systems, offering faster data storage and enhanced functionality.

==Prior Art==
Research on dielectric materials in memory cells and array structures.
Studies on charge storage and blocking mechanisms in semiconductor devices.

==Frequently Updated Research==
Ongoing studies on advanced dielectric materials for memory cells.
Research on optimizing memory array structures for improved performance.

==Questions about Memory Cell Technology==
===How do the specific dielectric materials used in this patent application improve memory cell performance?===
The unique arrangement of dielectric materials aims to enhance charge storage and blocking, leading to improved efficiency and reliability in memory cells.

===What are the potential implications of this technology in the semiconductor industry and consumer electronics?===
This technology could revolutionize data storage in various applications, offering faster performance and enhanced reliability in memory devices.


==Original Abstract Submitted==

Memory cells, and memories and memory array structures containing such memory cells, might include a control gate, a channel, a gate dielectric between the channel and the control gate, a charge-storage node between the gate dielectric and the control gate, a charge-blocking material between the charge-storage node and the control gate, a laminated dielectric between the charge-blocking material and the control gate, and a high-K dielectric between the laminated dielectric and the control gate, wherein the laminated dielectric comprises an instance of a first dielectric material between the charge-blocking material and the high-K dielectric and an instance of a second dielectric material between the instance of the first dielectric material and the high-K dielectric, and wherein the instance of the first dielectric material has a higher oxygen areal density than an oxygen areal density of the instance of the second dielectric material.



[[Category:G11C16/04]]
[[Category:G11C5/06]]
[[Category:H10B41/27]]
[[Category:H10B41/35]]
[[Category:H10B43/27]]
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[[Category:CPC_G11C16/0483]]