View source for 18515398. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)

=MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:DENSO CORPORATION|DENSO CORPORATION]]


[[Category:DENSO CORPORATION]]

==Inventor(s)==

[[:Category:SHOSUKE Nakabayashi of Nisshin-shi (JP)|SHOSUKE Nakabayashi of Nisshin-shi (JP)]][[Category:SHOSUKE Nakabayashi of Nisshin-shi (JP)]]

[[:Category:MASATAKE Nagaya of Nisshin-shi (JP)|MASATAKE Nagaya of Nisshin-shi (JP)]][[Category:MASATAKE Nagaya of Nisshin-shi (JP)]]

[[:Category:CHIAKI Sasaoka of Nagoya-shi (JP)|CHIAKI Sasaoka of Nagoya-shi (JP)]][[Category:CHIAKI Sasaoka of Nagoya-shi (JP)]]

[[:Category:ATSUSHI Tanaka of Nagoya-shi (JP)|ATSUSHI Tanaka of Nagoya-shi (JP)]][[Category:ATSUSHI Tanaka of Nagoya-shi (JP)]]

[[:Category:DAISUKE Kawaguchi of Hamamatsu-shi (JP)|DAISUKE Kawaguchi of Hamamatsu-shi (JP)]][[Category:DAISUKE Kawaguchi of Hamamatsu-shi (JP)]]

[[:Category:TOSHIKI Yui of Hamamatsu-shi (JP)|TOSHIKI Yui of Hamamatsu-shi (JP)]][[Category:TOSHIKI Yui of Hamamatsu-shi (JP)]]

[[:Category:KEISUKE Hara of Hamamatsu-shi (JP)|KEISUKE Hara of Hamamatsu-shi (JP)]][[Category:KEISUKE Hara of Hamamatsu-shi (JP)]]

[[:Category:TOMOMI Aratani of Hamamatsu-shi (JP)|TOMOMI Aratani of Hamamatsu-shi (JP)]][[Category:TOMOMI Aratani of Hamamatsu-shi (JP)]]

==MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18515398 titled 'MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

==Simplified Explanation==
The patent application describes a method for manufacturing a semiconductor device using laser beam technology to separate a device layer from a semiconductor substrate.

* Laser beam is used to irradiate a predetermined depth inside the semiconductor substrate.
* Device layer is separated from the remaining layer of the semiconductor substrate along the irradiated plane.

==Key Features and Innovation==
* Formation of deformation restriction layers on main surfaces of the semiconductor substrate.
* Laser beam application through the deformation restriction layer to separate the device layer.
* Precise separation of the device layer from the semiconductor substrate.

==Potential Applications==
This technology can be applied in the manufacturing of various semiconductor devices such as integrated circuits, sensors, and microprocessors.

==Problems Solved==
* Efficient separation of device layers from semiconductor substrates.
* Precision in manufacturing semiconductor devices.

==Benefits==
* Improved manufacturing process for semiconductor devices.
* Enhanced precision and control in device layer separation.

==Commercial Applications==
The technology can be utilized in the semiconductor industry for the production of advanced electronic devices, leading to improved performance and reliability in various applications.

==Prior Art==
Readers can explore prior research on laser beam technology in semiconductor manufacturing processes to understand the evolution of this innovation.

==Frequently Updated Research==
Stay updated on advancements in laser technology and semiconductor manufacturing processes to enhance the efficiency and effectiveness of this method.

==Questions about Semiconductor Device Manufacturing==
===How does the laser beam technology improve the manufacturing process of semiconductor devices?===
The laser beam technology allows for precise separation of device layers from semiconductor substrates, enhancing the overall manufacturing efficiency and accuracy.

===What are the potential applications of this semiconductor device manufacturing method beyond the current scope?===
The technology can potentially be applied in various industries requiring precise material separation processes, expanding its utility beyond semiconductor device manufacturing.


==Original Abstract Submitted==

In a manufacturing method of a semiconductor device, a first deformation restriction layer and a second deformation restriction layer are formed on a first main surface and a second main surface of a semiconductor substrate, the first main surface being opposite to the second main surface, and the semiconductor substrate having a device structure formed adjacent to the first main surface. A laser beam is applied through the second deformation restriction layer on the second main surface of the semiconductor substrate so as to irradiate a plane extending at a predetermined depth inside of the semiconductor substrate with the laser beam. A device layer that is a part of the semiconductor substrate including the first main surface and the device structure from a remaining layer of the semiconductor substrate along the plane irradiated with the laser beam.



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